Thermal Donor Generation in Boron- and Aluminium-Doped Czochralski Silicon

• Authors: K. Kopalko , P. Kaczor , M. Godlewski , T. Gregorkiewicz
• Languages of publication: EN

Abstracts

EN

Generation of thermal donor centres in oxygen-rich silicon doped with boron and aluminium acceptors has been studied with the FTIR technique. It has been found that upon annealing 470°C two kinds of absorption series were generated. One of them belonged to the well-known first ionization level of silicon thermal (double) donors (TD's): TD°/TD^{+} . The second series was identified with the so-called shallow thermal donors (STD's). The generation kinetics of the two series was followed for both kinds of acceptor doping and significant differences has been found. The results of the FTIR investigations were further compared with the magnetic resonance findings allowing for their mutual correlation and more general conclusions.

Keywords

EN

71.55.Ht; 78.50.Ge

Discipline

• 71.55.Ht: Other nonmetals

• Publisher: Institute of Physics, Polish Academy of Sciences
• Journal: Acta Physica Polonica A
• Year: 1991
• Volume: 80
• Issue: 3
• Pages: 345-348

Dates

published

1991-09

Contributors

author

K. Kopalko

• Institute of Physics, Polish Academy of Sciences, Al. Lotników 32/46, 02-668 Warszawa, Poland

author

P. Kaczor

• Institute of Physics, Polish Academy of Sciences, Al. Lotników 32/46, 02-668 Warszawa, Poland

author

M. Godlewski

• Institute of Physics, Polish Academy of Sciences, Al. Lotników 32/46, 02-668 Warszawa, Poland

author

T. Gregorkiewicz

• Van der Waals-Zeeman Laboratorium, University of Amsterdam, Valckenierstraat 65, NL-1018 XE Amsterdam, The Netherlands

Identifiers

DOI

10.12693/APhysPolA.80.345