Indications for Diamagnetic Shift in the Ground State of Boron in Silicon

• Authors: M. Stöhr , J. Chroboczek
• Languages of publication: EN

Abstracts

EN

Indications for the observation of the diamagnetic shrinkage of the boron acceptor wave function (WF) in Si are reported. Uniaxial stress (X) was used to split the ground state (GS) of the boron acceptor into two energy levels with spatially complementary WF. The magnetic field selectively induces a shrinking of one of the two WF, depending on whether it is applied parallel or perpendicular to the X axis. As a result, the hopping transitions between lower and higher energy levels are redistributed, leading to significant changes in the activation energy ε_{3}. This effect was borne out by experiment.

Keywords

EN

71.55.Ht; 71.70.-d; 72.20.-i

Discipline

• 71.55.Ht: Other nonmetals
• 71.70.-d: Level splitting and interactions(see also 73.20.-r Surface and interface electron states; 75.30.Et Exchange and superexchange interactions)
• 72.20.-i: Conductivity phenomena in semiconductors and insulators(see also 66.70.-f Nonelectronic thermal conduction and heat-pulse propagation in solids; thermal waves)

• Publisher: Institute of Physics, Polish Academy of Sciences
• Journal: Acta Physica Polonica A
• Year: 1991
• Volume: 80
• Issue: 3
• Pages: 465-468

Dates

published

1991-09

Contributors

author

M. Stöhr

• Service National des Champs Intenses, CNRS, 38042 Grenoble, France

author

J. Chroboczek

• Centre National d'Études des Télécom., 38243 Meylan, France

Identifiers

DOI

10.12693/APhysPolA.80.465