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2019 | 121 | 64-71
Article title

Preparation of ZnO thin film using sol-gel dip-coating technique and their characterization for optoelectronic applications

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ZnO thin film with an aim to employ in opto-electronic applications was prepared using sol-gel dip-coating route and thereafter sintered at temperature 500 ºC. The film has been investigated by XRD pattern, SEM, UV-Vis and photoluminescence spectroscopy for physical and optical characterization of ZnO thin film. X-Ray diffraction pattern analysis reveals the polycrystalline nature with hexagonal wurtzite structure having orientation along the plane (002). Scanning electron micrograph shows symmetrical dense ZnO rod throughout the surface. The diffuse reflectance spectrum is studied in the range of wavelength 300-800 nm. A band gap of 3.21 eV is calculated using Kubelka-Munk function. PL spectrum shows strong peak at 380 nm due to oxygen vacancy of ZnO.
Band gap   SEM   XRD   ZnO   dip coating  
Physical description
  • Department of Applied Sciences, KIET Group of Institutions, Ghaziabad, India
  • Department of Applied Sciences, KIET Group of Institutions, Ghaziabad, India
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