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2017 | 67 | 2 | 149-160
Article title

Impact of the etching time and current density on Capacitance-Voltage characteristics of P-type of porous silicon

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EN
Abstracts
EN
In This paper, electrochemical etching teqniques was using to formation of nano crystalline porous silicon layer on p-type Si substrates. Measurement of capacitance – voltage characteristics at various etching time and current densities were used for calculated built in voltage and type of heterojunction. The built in voltage values were decreased with increasing etching time and current densities for both anisotype Al/PS/p-Si/Al heterojunction. These characteristics are interpreted by assuming the abrupt heterojunction model. The effect of different etching time and current densities on electrical properties of PS have been investigated.
Discipline
Year
Volume
67
Issue
2
Pages
149-160
Physical description
Contributors
author
  • Department of Physics, College of Education, Al-Mustanseriyah University, Iraq
author
  • Department of Physics, College of Education, Al-Mustanseriyah University, Iraq
  • Department of Physics, College of Education, Al-Mustanseriyah University, Iraq
References
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  • [17] Hasan A. Hadi, Raid A. Ismail and Nadir F. Habubi. Fabrication and characterization of porous silicon layer prepared by photo-electrochemical etching in CH3OH:HF solution. International Letters of Chemistry, Physics and Astronomy, 3 (2013) 29-36.
Document Type
article
Publication order reference
Identifiers
YADDA identifier
bwmeta1.element.psjd-8305447c-bca3-4154-bbae-450c7e4550a3
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