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2017 | 86 | 3 | 205-225
Article title

Electronic structures of CdSe quantum dots embedded in ZnSe

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EN
Abstracts
EN
The electronic structures and optical matrix elements of CdSe semiconductor quantum dots of near cubical, hemispherical and cylindrical shape embedded in ZnSe were calculated. Bulk Hamiltonian matrices were obtained using the empirical tight binding method including spin-orbital coupling and relativistic effects. All quantum dots were simulated in reciprocal space and the number of atoms in each quantum dot was kept nearly equal for the comparison purpose. An adjacency matrix was produced which indicates the adjacencies of unit cells and the bulk Hamiltonian was included for each adjacency point in order to obtain the quantum dot Hamiltonians. The strain effects, valence band offset and spin orbital coupling were included in the calculations. The quantum dot Hamiltonian was solved to obtain the highest and lowest eigenvalues from which the electronic structure was obtained. Then eigenvalues near integers ranging from the lowest eigenvalue to highest eigenvalue was generated for the point.
Discipline
Year
Volume
86
Issue
3
Pages
205-225
Physical description
Contributors
  • Department of Physics, University of Colombo, Colombo3, Sri Lanka
  • Department of Physics, University of Colombo, Colombo3, Sri Lanka
References
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Document Type
article
Publication order reference
Identifiers
YADDA identifier
bwmeta1.element.psjd-72fed9f6-968e-40e1-ab88-5cbe851fc210
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