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2011 | 6 | 8-11

Article title

Zinc Oxide by Atomic Layer Deposition for the second and third generation of photovoltaic cells


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ZnO films deposited by Atomic Layer Deposition (ALD) method at different growth conditions have required electron concentrations and electron mobilities for applications as n-type partners to ptype CdTe (ZnO layers with a reduced free electron concentration) and the transparent conductive oxide (TCO, metallic ZnO films). In the latter case their electrical properties are comparable to those of ITO and ZnO:Al (AZO) films obtained by a sputtering. We also demonstrate that ZnO films deposited by the ALD are suitable for construction of hybrid structures (semiconductor/organic material) for applications in novel photovoltaic (PV) panels based on organic materials (PV cells of the third generation).



  • Dept. Math. and Natural Sciences College of Science, Cardinal S. Wyszyński Univ., Warsaw, Poland
  • Institute of Physics, Polish Acad. Sciences, Al. Lotników 32/46, 02-668 Warsaw, Poland
  • Institute of Physics, Polish Acad. Sciences, Al. Lotników 32/46, 02-668 Warsaw, Poland
  • Institute of Physics, Polish Acad. Sciences, Al. Lotników 32/46, 02-668 Warsaw, Poland


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