PL EN


Preferences help
enabled [disable] Abstract
Number of results
- |
Article title

Gate driver for SiC Mosfet transistors

Content
Title variants
Languages of publication
PL
Abstracts
PL
As new power transistors, such as SiC Mosfets, are being increasingly used in power electro- nics systems, it has become necessary to use special drivers. This article compares the parame- ters of SiC Mosfet, Si Mosfet, and IGBT gate circuits. Differences are discussed with reference to the ways in which these transistors are controlled. Gate circuit parameters of SiC transistors differ slightly from those of common Mosfet or IGBT transistors, and in order to be able to fully utilise the capabilities of these new devices, it is necessary to employ appropriate drivers. This article discusses one such driver for SiC transistors.
Keywords
Publisher
Year
-
Physical description
Dates
online
2016-10-18
Contributors
References
Document Type
Publication order reference
Identifiers
YADDA identifier
bwmeta1.element.ojs-nameId-6e3e8ea9-5a94-37a7-828b-e6cd5da23db6-year-2016-article-6693
JavaScript is turned off in your web browser. Turn it on to take full advantage of this site, then refresh the page.