Gate driver for SiC Mosfet transistors

• Authors: Wojciech Mysiński , Wiesław Jakubas
• Languages of publication: PL

Abstracts

PL

As new power transistors, such as SiC Mosfets, are being increasingly used in power electro- nics systems, it has become necessary to use special drivers. This article compares the parame- ters of SiC Mosfet, Si Mosfet, and IGBT gate circuits. Differences are discussed with reference to the ways in which these transistors are controlled. Gate circuit parameters of SiC transistors differ slightly from those of common Mosfet or IGBT transistors, and in order to be able to fully utilise the capabilities of these new devices, it is necessary to employ appropriate drivers. This article discusses one such driver for SiC transistors.

Keywords

PL

SiC Mosfet, gate driver

• Publisher: [unknown2]
• Journal: Czasopismo Techniczne
• Year: -

Dates

online

2016-10-18

Contributors

author

Wojciech Mysiński

author

Wiesław Jakubas