Analysis of the use of transistors based on SiC technology in inverters in the context of electromagnetic compatibility

• Authors: Wojciech Czuchra , Wojciech Mysiński , Bartosz Woszczyna
• Languages of publication: PL

Abstracts

PL

Currently, manufacturers of power-electronic components are trying to introduce the silicon carbide (SiC) technology in their products and MOSFET transistors made with this technology are available on the market. They are characterised by a significantly higher operating frequency, reaching even 100 kHz and low switching losses. The application of this type of devices causes high voltage gradients at the inverter output, which can lead to increased inverter electromagnetic disturbances. This article presents test results and a high-frequency analysis, allowing for a preliminary evaluation of the use of SiC transistors in inverters in the context of electromagnetic compatibility.

Keywords

PL

power electronics, transistors SiC electromagnetic compatibility

• Publisher: [unknown2]
• Journal: Czasopismo Techniczne
• Year: -

Dates

online

2016-10-18

Contributors

author

Wojciech Czuchra

author

Wojciech Mysiński

author

Bartosz Woszczyna