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Journal

International Journal of Electronics and Telecommunications

2020 | 66 | 3 |

Article title

Application of the Averaged Model of the Diode transistorSwitch for Modelling Characteristics of a Boost Converter with an IGBT

Authors

Paweł Górecki , Paweł Górecki

Content

Full texts:
oai-journals-pan-pl-117107/full-text/76_2487_Gorecki_skl.pdf
oai-journals-pan-pl-117107/full-text/76_2487_Gorecki_skl.pdf

Title variants

PL
Application of the Averaged Model of the Diode transistorSwitch for Modelling Characteristics of a Boost Converter with an IGBT

Languages of publication

EN

Abstracts

Keywords

EN
PL

Publisher

Polska Akademia Nauk

Journal

International Journal of Electronics and Telecommunications

Year

2020

Volume

66

Issue

3

Physical description

Contributors

author
Paweł Górecki
author
Paweł Górecki

References

Document Type

Publication order reference

Identifiers

YADDA identifier

bwmeta1.element.oai-journals-pan-pl-117107
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