Distribution of potential barrier height local values at Al-SiO2 and Si-SiO2 interfaces of the metal-oxide-semiconductor structures - Bulletin of the Polish Academy of Sciences: Technical Sciences - Volume 54, Issue 4 (2006) - PSJD - Yadda

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Journal

Bulletin of the Polish Academy of Sciences: Technical Sciences

2006 | 54 | 4 |

Article title

Distribution of potential barrier height local values at Al-SiO2 and Si-SiO2 interfaces of the metal-oxide-semiconductor structures

Authors

K. Piskorski , H.M. Przewlocki

Content

Full texts:

oai-journals-pan-pl-111741/full-text/(54-4)461.pdf

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Title variants

Languages of publication

PL

Abstracts

Keywords

PL

barrier height effective contact potential difference MOS system Nauki Techniczne

Publisher

Polska Akademia Nauk

Journal

Bulletin of the Polish Academy of Sciences: Technical Sciences

Year

2006

Volume

54

Issue

4

Physical description

Contributors

author

K. Piskorski

author

H.M. Przewlocki

References

Document Type

Publication order reference

Identifiers

YADDA identifier

bwmeta1.element.oai-journals-pan-pl-111741

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