Electrical and Optical Studies in Ge_{100-x}S_x Chalcogenide Thin Films

• Authors: H. Metwally
• Languages of publication: EN

Abstracts

EN

Thin films of Ge_{100-x}S_x with different values of x are deposited on quartz substrates by a conventional thermal evaporation technique. The electrical conductivity of these films was measured. The experiments reveal that the electronic conduction is strongly composition dependent and is thermally activated with a single activation energy for x>40. A variable range hopping conduction mechanism seems to dominate when x=16 and 27. The optical absorption of the films is investigated using spectrophotometric measurements of the transmittance and reflectance in the wavelength range 200-3000 nm. All the studied compositions obey the Tauc relation concerning the non-direct transitions. The optical energy gap E_g value increases with the increase in chalcogen content x. The Urbach parameter E_0 decreases from 310 meV to 149 meV as x increases from 16 to 70.

Keywords

EN

73.61.Jc; 78.66.Jg

Discipline

• 73.61.Jc: Amorphous semiconductors; glasses
• 78.66.Jg: Amorphous semiconductors; glasses

• Publisher: Institute of Physics, Polish Academy of Sciences
• Journal: Acta Physica Polonica A
• Year: 2001
• Volume: 99
• Issue: 6
• Pages: 683-690

Dates

published

2001-06

received

2000-12-08

(unknown)

2001-04-10

Contributors

author

H. Metwally

• Physics Department, Faculty of Education, Ain Shams University, Roxy, Cairo, Egypt

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Identifiers

DOI

10.12693/APhysPolA.99.683