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2001 | 99 | 6 | 683-690
Article title

Electrical and Optical Studies in Ge_{100-x}S_x Chalcogenide Thin Films

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EN
Abstracts
EN
Thin films of Ge_{100-x}S_x with different values of x are deposited on quartz substrates by a conventional thermal evaporation technique. The electrical conductivity of these films was measured. The experiments reveal that the electronic conduction is strongly composition dependent and is thermally activated with a single activation energy for x>40. A variable range hopping conduction mechanism seems to dominate when x=16 and 27. The optical absorption of the films is investigated using spectrophotometric measurements of the transmittance and reflectance in the wavelength range 200-3000 nm. All the studied compositions obey the Tauc relation concerning the non-direct transitions. The optical energy gap E_g value increases with the increase in chalcogen content x. The Urbach parameter E_0 decreases from 310 meV to 149 meV as x increases from 16 to 70.
Keywords
EN
Year
Volume
99
Issue
6
Pages
683-690
Physical description
Dates
published
2001-06
received
2000-12-08
(unknown)
2001-04-10
References
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Document Type
Publication order reference
YADDA identifier
bwmeta1.element.bwnjournal-article-appv99n606kz
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