PL EN


Preferences help
enabled [disable] Abstract
Number of results
2000 | 98 | 6 | 747-762
Article title

Modélisation des Caractéristiques du GaAs MESFET

Content
Title variants
Languages of publication
EN
Abstracts
EN
A NEW MODELING OF THE CHARACTERISTICS OF GaAs MESFET'S: A new approach for I-V standard model is proposed. This approach allowed to conceive applicable model for MESFET's operating in the turn-one or pinch-off region, and valid for the short-channel and the long-channel MESFET's, in which the two-dimensional potential distribution contributed by the depletion layer under the gate is obtained by conventional 1D approximation. The drain current is decomposed into two components; the first is due to the conduction current flowing through the conduction channel, and the second component is a result of the current flowing through the space charge region resulting from the injection of the channel electrons into this last region. Moreover, comparison between the proposed analytical model and the experimental data are made and good agreement is obtained. In the end, this model is applied to estimate the cut-off frequency of the MESFET-GaAs from these static characteristics. This estimation is based on the theoretical calculation of the transconductance and the gate capacitance of the device.
Keywords
EN
Year
Volume
98
Issue
6
Pages
747-762
Physical description
Dates
published
2000-12
received
1999-06-15
(unknown)
2000-04-11
References
Document Type
Publication order reference
YADDA identifier
bwmeta1.element.bwnjournal-article-appv98z609kz
Identifiers
JavaScript is turned off in your web browser. Turn it on to take full advantage of this site, then refresh the page.