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2000 | 98 | 4 | 401-409
Article title

Effect of Annealing on the AC Conductivity and the Dielectric Properties of In_{2}Te_{3} Thin Films

Content
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Languages of publication
EN
Abstracts
EN
In_{2}Te_{3} thin films were prepared by thermal evaporation technique. The composition of the films is checked by energy dispersive X-ray analysis. X-ray analysis showed that the as-deposited In_{2}Te_{3} films as well as films annealed at temperatures ≤473K have crystalline structure. The ac conductivity σ_{ac}(ω), the dielectric constant ε_{1} and the dielectric loss ε_{2} of In_{2}Te_{3} films were studied in the temperature range 303-373K and in the frequency range 100Hz-100kHz. The ac conduction activation energy ΔE_{σ}(ω) was found to be 0.065eV for the as-deposited films. The ac conductivity was found to obey the relation σ_{ac}(ω)=Aω^{s}, where s is the frequency exponent. The obtained temperature dependence of s is reasonably interpreted by quantum mechanical tunneling model. Both the dielectric constant ε_{1} and the dielectric loss ε_{2} increased with temperature and decreased with frequency in the investigated range. The frequency and temperature dependencies of σ_{ac}(ω), ε_{1}, and ε_{2} for the annealed samples have the same behavior as that for the as-deposited samples. However, values of σ_{ac}(ω), ε_{1}, and ε_{2} measured at any frequency and temperature increased with annealing temperature up to 473K. It was found also that ΔE_{σ}(ω) decreased with annealing temperature.
Keywords
EN
Year
Volume
98
Issue
4
Pages
401-409
Physical description
Dates
published
2000-10
received
2000-04-26
(unknown)
2000-07-13
References
Document Type
Publication order reference
YADDA identifier
bwmeta1.element.bwnjournal-article-appv98z410kz
Identifiers
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