Electrical and Dielectric Properties of Amorphous Ge_{1}Se_{1.35}TL_{0.1} Films

• Authors: M.M. Abdel-Aziz , M.A. Afifi , H.H. Labib , E.G. El-Metwally
• Languages of publication: EN

Abstracts

EN

The temperature dependence of the DC and AC electrical conductivity were measured for Ge_{1}Se_{1.35}Tl_{0.1} films. The value of DC electrical conduction energy ΔE_{σ} does not depend on film thickness in the investigated range with mean value of 0.72eV. The AC conductivity σ_{AC} is related to frequency by the expression σ_{AC}=Aω^{S}, where S is the frequency exponent which decreases linearly with increasing temperature. This can be explained in terms of the pair (bipolaron) correlated barrier hopping model suggested by Elliott. The frequency and temperature dependence of real and imaginary parts of the dielectric constant were studied for Ge_{1}Se_{1.35}Tl_{0.1} films. The dielectric constant (real part) and the dielectric loss (imaginary part) increase with increasing temperature and decrease with increasing frequency in the investigated range of frequency and temperature. The maximum barrier height W_{M} can be calculated according to the Giuntini equation at different temperatures. The obtained value of W_{M} is in good agreement with the theory of hopping of charge carriers over a potential barrier as suggested by Elliott in case of chalcogenide glasses.

Keywords

EN

72.80.Ng; 72.20.-i

• Journal: Acta Physica Polonica A
• Year: 2000
• Volume: 98
• Issue: 4
• Pages: 393-399

Dates

published

2000-10

received

1999-11-24

(unknown)

2000-05-12

Contributors

author

M.M. Abdel-Aziz

• Physics Department, Faculty of Education, Ain Shams University, Cairo, Egypt

author

M.A. Afifi

• Physics Department, Faculty of Education, Ain Shams University, Cairo, Egypt

author

H.H. Labib

• Physics Department, Faculty of Education, Ain Shams University, Cairo, Egypt

author

E.G. El-Metwally

• Physics Department, Faculty of Education, Ain Shams University, Cairo, Egypt