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Abstracts
Single-photon detection in a range of submillimeter waves (λ = 0.17-0.20 mm) is demonstrated by using lateral semiconductor quantum dots fabricated on a high-mobility GaAs/AlGaAs single heterostructure crystal. When a submillimeter photon is absorbed by the quantum dot while it is operated as a single-electron transistor, it switches on (or off) the conductance through the quantum dot. An incident flux of 0.1 photons/s on an effective detector area, (0.1 mm)^{2}, is detected with a 1 ms time resolution. The effective noise equivalent power is roughly estimated to reach on the order of 10^{-22} W/Hz^{1/2}, a value superior to the ever reported best values of conventional detectors by a factor more than 10^{4}.
Journal
Year
Volume
Issue
Pages
271-278
Physical description
Dates
published
2000-09
Contributors
author
- Department of Basic Science, University of Tokyo, Komaba 3-8-1, Meguro-ku, Tokyo, Japan
author
- Japan Science and Technology Corporation (JST) , Kawaguchi, Saitama 332-0012, Japan
author
- Japan Science and Technology Corporation (JST) , Kawaguchi, Saitama 332-0012, Japan
author
- Department of Basic Science, University of Tokyo, Komaba 3-8-1, Meguro-ku, Tokyo, Japan
References
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Publication order reference
Identifiers
YADDA identifier
bwmeta1.element.bwnjournal-article-appv98z309kz