PL EN


Preferences help
enabled [disable] Abstract
Number of results
2000 | 98 | 3 | 195-201
Article title

Polarization Induced Effects in AlGaN/GaN Heterostructures

Authors
Content
Title variants
Languages of publication
EN
Abstracts
EN
Two-dimensional hole and electron gases in wurtzite GaN/Al_{x}Ga_{1-x}N/GaN heterostructures areinduced by strong polarization induced effects. The sheet carrier concentration and the confinement of the two-dimensional carrier gases located close to one of the AlGaN/GaN interfaces are sensitive to a high number of different physical properties such as polarity, alloy composition, strain, thickness, and doping. We have investigated the structural quality, the carrier concentration profiles, and electrical transport properties by a combination of high resolution X-ray diffraction, Hall effect, and C-V profiling measurements. The investigated heterostructures with N- and Ga-face polarity were grown by metalorganic vapor phase or plasma induced molecular beam epitaxy covering a broad range of alloy compositions and barrier thickness. By comparison of theoretical and experimental results we demonstrate that the formation of two-dimensional hole and electron gases in GaN/AlGaN/GaN heterostructures both rely on the difference of the polarization between the AlGaN and the GaN layer. In addition the role of polarity on the carrier accumulation at different interfaces in n- and p-doped heterostructures will be discussed in detail.
Keywords
EN
Year
Volume
98
Issue
3
Pages
195-201
Physical description
Dates
published
2000-09
References
Document Type
Publication order reference
YADDA identifier
bwmeta1.element.bwnjournal-article-appv98z303kz
Identifiers
JavaScript is turned off in your web browser. Turn it on to take full advantage of this site, then refresh the page.