Analytical Band Model in Monte Carlo Simulation of Electric Transport in ZnS Thin Film Electroluminescent Devices

• Authors: H. Zhao , Y. Wang , X. Xu
• Languages of publication: EN

Abstracts

EN

In this paper, an analytical band model is introduced in Monte Carlo simulation of electric transport process in thin film electroluminescent devices. The band structure of ZnS calculated from the empirical pseudopotential method is fitted by using polynomials. The density of states and scattering rates are also calculated from these polynomials. Based on these results, the electric transport process in ZnS-type thin film electroluminescent devices is simulated through the Monte Carlo method. By comparison with others, this model is as fast as the nonparabolic model and as accurate as the full band model. Furthermore, the influence of the band model on the simulation results is also investigated. We show that the dispersion relation and density of states are all important in the simulation.

Keywords

EN

78.60.-b; 72.20.-i

• Journal: Acta Physica Polonica A
• Year: 2000
• Volume: 98
• Issue: 1-2
• Pages: 123-130

Dates

published

2000-07

received

2000-05-08

Contributors

author

H. Zhao

• Institute of Optoelectronic Technology, Northern Jiaotong University Beijing 100044, China

author

Y. Wang

• Institute of Optoelectronic Technology, Northern Jiaotong University Beijing 100044, China

author

X. Xu

• Institute of Optoelectronic Technology, Northern Jiaotong University Beijing 100044, China