Electrical Conductivity and Thermoelectric Power of a-Se_{80-x}Ga_{20}Te_{x} (x=0,5,10,15 and 20) Thin Films

• Authors: Zishan H. Khan , M. Zulfequar , M. Ilyas , M. Husain
• Languages of publication: EN

Abstracts

EN

The dc conductivity and thermoelectric power of a-Se_{80-x}Ga_{20}Te_{x} (x=0,5,10,15 and 20) thin films were reported in the present work. The free charge carrier concentration was calculated with the help of dc conductivity and thermoelectric power measurements. The calculated values of free charge carrier concentration were used to evaluate the free charge carrier mobility from which grain boundary potential was evaluated. The results are interpreted in terms of small polaron hopping, the structure of Se-Te and the grain boundary potential barrier.

Keywords

EN

73.61.Jc

• Publisher: Institute of Physics, Polish Academy of Sciences
• Journal: Acta Physica Polonica A
• Year: 2000
• Volume: 98
• Issue: 1-2
• Pages: 93-102

Dates

published

2000-07

received

2000-02-28

(unknown)

2000-05-15

Contributors

author

Zishan H. Khan

• Department of Applied Sciences & Humanities,Faculty of Engineering & Technology Jamia Millia Islamia, New Delhi-110025, India,

author

M. Zulfequar

• Department of Physics, Jamia Millia Islamia, New Delhi-110025 India

author

M. Ilyas

• Department of Physics, Jamia Millia Islamia, New Delhi-110025 India

author

M. Husain

• Department of Physics, Jamia Millia Islamia, New Delhi-110025 India