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2000 | 97 | 3 | 539-542
Article title

Influence of Temperature and Annealing on GMR in Sputtered Permalloy/Cu Multilayers

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EN
Abstracts
EN
The influence of temperature and annealing on giant magnetoresistance of Si(100)/Cu(20 nm)/Py(2 nm)/(Cu(2 nm)/Py(2 nm))_{100} multilayer (Py = Ni_{83}Fe_{17}) sputtered at room temperature in double face-to-face configuration is reported. It was found that giant magnetoresistance value, ΔR_{GMR}/R_{sat} (where R_{sat} is the resistance in saturation), monotonically decreases with increasing temperature (4.5% at 173 K to about 1% at 373 K). This results from the decrease in magnetic change of resistance, ΔR_{GMR}, and to the lesser extent from an increase in R_{sat}, though both of them are caused by the shortening of electrons mean free path. The observed almost linear decrease in giant magnetoresistance saturation field with increasing temperature is explained by temperature changes of magnetization profile. Vibrating sample magnetometer measurements revealed that the increase in temperature results in pronounced decrease in remnant to saturation magnetization ratio (M_{r}/M_{s}) suggesting that at low temperatures magnetic bridges between Py layers play an important role in magnetization process. It is shown that proper annealing, by an annihilation of bridges and/or lateral decoupling, leads to an increase in giant magnetoresistance ratio from 3.4% in as deposited state to 4.7%.
Keywords
EN
Year
Volume
97
Issue
3
Pages
539-542
Physical description
Dates
published
2000-03
References
Document Type
Publication order reference
YADDA identifier
bwmeta1.element.bwnjournal-article-appv97z344kz
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