Influence of Temperature and Annealing on GMR in Sputtered Permalloy/Cu Multilayers

• Authors: M. Urbaniak , F. Stobiecki , T. Luciński , M. Kopcewicz , A. Grabias , J. Aleksiejew
• Languages of publication: EN

Abstracts

EN

The influence of temperature and annealing on giant magnetoresistance of Si(100)/Cu(20 nm)/Py(2 nm)/(Cu(2 nm)/Py(2 nm))_{100} multilayer (Py = Ni_{83}Fe_{17}) sputtered at room temperature in double face-to-face configuration is reported. It was found that giant magnetoresistance value, ΔR_{GMR}/R_{sat} (where R_{sat} is the resistance in saturation), monotonically decreases with increasing temperature (4.5% at 173 K to about 1% at 373 K). This results from the decrease in magnetic change of resistance, ΔR_{GMR}, and to the lesser extent from an increase in R_{sat}, though both of them are caused by the shortening of electrons mean free path. The observed almost linear decrease in giant magnetoresistance saturation field with increasing temperature is explained by temperature changes of magnetization profile. Vibrating sample magnetometer measurements revealed that the increase in temperature results in pronounced decrease in remnant to saturation magnetization ratio (M_{r}/M_{s}) suggesting that at low temperatures magnetic bridges between Py layers play an important role in magnetization process. It is shown that proper annealing, by an annihilation of bridges and/or lateral decoupling, leads to an increase in giant magnetoresistance ratio from 3.4% in as deposited state to 4.7%.

Keywords

EN

75.70.Ak; 75.70.Pa

Discipline

• 75.70.Ak: Magnetic properties of monolayers and thin films

• Journal: Acta Physica Polonica A
• Year: 2000
• Volume: 97
• Issue: 3
• Pages: 539-542

Dates

published

2000-03

Contributors

author

M. Urbaniak

• Institute of Molecular Physics, Polish Academy of Sciences, Smoluchowskiego 17, 60-179 Poznań, Poland

author

F. Stobiecki

• Institute of Molecular Physics, Polish Academy of Sciences, Smoluchowskiego 17, 60-179 Poznań, Poland

author

T. Luciński

• Institute of Molecular Physics, Polish Academy of Sciences, Smoluchowskiego 17, 60-179 Poznań, Poland

author

M. Kopcewicz

• Institute of Electronic Materials Technology, Wólczyńska 133, 01-919 Warszawa, Poland

author

A. Grabias

• Institute of Electronic Materials Technology, Wólczyńska 133, 01-919 Warszawa, Poland

author

J. Aleksiejew

• Institute of Molecular Physics, Polish Academy of Sciences, Smoluchowskiego 17, 60-179 Poznań, Poland

Identifiers

DOI

10.12693/APhysPolA.97.539