Temperature Dependence of Magnetisation Reversal and GMR in Spin Valve Structures

• Authors: F. Stobiecki , T. Stobiecki , B. Ocker , W. Maass , W. Powroznik , A. Paja , C. Loch , K. Röll
• Languages of publication: EN

Abstracts

EN

Temperature measurements of magnetisation reversal, resistance and magnetoresistance of Co/Cu/Co/FeMn spin valve structures deposited in different conditions were performed. The influence of exchange anisotropy energy, interlayer coupling energy, and electron transport properties were taken into consideration in explaining differences in giant magnetoresistance effect of investigated samples.

Keywords

EN

75.70.Pa; 68.55.Ln; 68.55.-a

Discipline

• 68.55.Ln: Defects and impurities: doping, implantation, distribution, concentration, etc.(for diffusion of impurities, see 66.30.J-)
• 68.55.-a: Thin film structure and morphology(for methods of thin film deposition, film growth and epitaxy, see 81.15.-z)

• Journal: Acta Physica Polonica A
• Year: 2000
• Volume: 97
• Issue: 3
• Pages: 523-526

Dates

published

2000-03

Contributors

author

F. Stobiecki

• Institute of Molecular Physics, Polish Academy of Sciences, Smoluchowskiego 17, 60-179 Poznań, Poland

author

T. Stobiecki

• Department of Electronics, University of Mining and Metallurgy, Kraków, Poland

author

B. Ocker

• Balzers Process Systems GmbH, Alzenau, Germany

author

W. Maass

• Balzers Process Systems GmbH, Alzenau, Germany

author

W. Powroznik

• Department of Electronics, University of Mining and Metallurgy, Kraków, Poland

author

A. Paja

• Department of Solid State Physics, Faculty of Physics and Nuclear Techniques University of Mining and Metallurgy, Kraków, Poland

author

C. Loch

• Department of Physics, University of Kassel, Germany

author

K. Röll

• Department of Physics, University of Kassel, Germany

Identifiers

DOI

10.12693/APhysPolA.97.523