Interaction Between Magnetic Layers in Structures with Narrow-Gap IV-VI Semiconductors

• Authors: V. Dugaev , V. Litvinov , W. Dobrowolski , T. Story
• Languages of publication: EN

Abstracts

EN

The results of calculation of the indirect exchange interaction between magnetic layers are presented for the case of a structure with narrow-gap semiconducting IV-VI quantum well. The main mechanism is a magnetic polarization of the size-quantized electrons and holes inside the well. This type of interaction is suggested for the explanation of recent experiments on EuS/PbS structures.

Keywords

EN

75.70.Cn; 75.50.Pp; 75.70.Ak

Discipline

• 75.70.Ak: Magnetic properties of monolayers and thin films
• 75.70.Cn: Magnetic properties of interfaces (multilayers, superlattices, heterostructures)
• 75.50.Pp: Magnetic semiconductors

• Journal: Acta Physica Polonica A
• Year: 2000
• Volume: 97
• Issue: 3
• Pages: 455-458

Dates

published

2000-03

Contributors

author

V. Dugaev

• Chernovtsy Department of the Institute of Materials Science Problems Ukrainian Academy of Sciences, Vilde 5, 274001 Chernovtsy, Ukraine

author

V. Litvinov

• Chernovtsy Department of the Institute of Materials Science Problems Ukrainian Academy of Sciences, Vilde 5, 274001 Chernovtsy, Ukraine

author

W. Dobrowolski

• Institute of Physics, Polish Academy of Sciences, Al. Lotników 32/46, 02-668 Warsaw, Poland

author

T. Story

• Institute of Physics, Polish Academy of Sciences, Al. Lotników 32/46, 02-668 Warsaw, Poland

Identifiers

DOI

10.12693/APhysPolA.97.455