Full-text resources of PSJD and other databases are now available in the new Library of Science.
Visit https://bibliotekanauki.pl

PL EN


Preferences help
enabled [disable] Abstract
Number of results
2000 | 97 | 3 | 455-458

Article title

Interaction Between Magnetic Layers in Structures with Narrow-Gap IV-VI Semiconductors

Content

Title variants

Languages of publication

EN

Abstracts

EN
The results of calculation of the indirect exchange interaction between magnetic layers are presented for the case of a structure with narrow-gap semiconducting IV-VI quantum well. The main mechanism is a magnetic polarization of the size-quantized electrons and holes inside the well. This type of interaction is suggested for the explanation of recent experiments on EuS/PbS structures.

Keywords

EN

Contributors

author
  • Chernovtsy Department of the Institute of Materials Science Problems Ukrainian Academy of Sciences, Vilde 5, 274001 Chernovtsy, Ukraine
author
  • Chernovtsy Department of the Institute of Materials Science Problems Ukrainian Academy of Sciences, Vilde 5, 274001 Chernovtsy, Ukraine
  • Institute of Physics, Polish Academy of Sciences, Al. Lotników 32/46, 02-668 Warsaw, Poland
author
  • Institute of Physics, Polish Academy of Sciences, Al. Lotników 32/46, 02-668 Warsaw, Poland

References

Document Type

Publication order reference

Identifiers

YADDA identifier

bwmeta1.element.bwnjournal-article-appv97z323kz
JavaScript is turned off in your web browser. Turn it on to take full advantage of this site, then refresh the page.