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2000 | 97 | 3 | 455-458
Article title

Interaction Between Magnetic Layers in Structures with Narrow-Gap IV-VI Semiconductors

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Abstracts
EN
The results of calculation of the indirect exchange interaction between magnetic layers are presented for the case of a structure with narrow-gap semiconducting IV-VI quantum well. The main mechanism is a magnetic polarization of the size-quantized electrons and holes inside the well. This type of interaction is suggested for the explanation of recent experiments on EuS/PbS structures.
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Contributors
author
  • Chernovtsy Department of the Institute of Materials Science Problems Ukrainian Academy of Sciences, Vilde 5, 274001 Chernovtsy, Ukraine
author
  • Chernovtsy Department of the Institute of Materials Science Problems Ukrainian Academy of Sciences, Vilde 5, 274001 Chernovtsy, Ukraine
  • Institute of Physics, Polish Academy of Sciences, Al. Lotników 32/46, 02-668 Warsaw, Poland
author
  • Institute of Physics, Polish Academy of Sciences, Al. Lotników 32/46, 02-668 Warsaw, Poland
References
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bwmeta1.element.bwnjournal-article-appv97z323kz
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