Tunneling Magnetoresistance in Planar Ferromagnetic Junctions

• Authors: M. Wilczyński , J. Barnaś
• Languages of publication: EN

Abstracts

EN

Bias dependence of the tunnel magnetoresistance in simple planar ferromagnetic junctions is considered theoretically within the one-band model. The limit of sequential tunnelling in double junctions with a non-magnetic central electrode is studied as well. In this case tunnel magnetoresistance exists only when the spin relaxation time due to spin-flip scattering processes inside the central electrode is sufficiently long.

Keywords

EN

72.15.Gd; 73.40.Gk; 75.70.-i

Discipline

• 75.70.-i: Magnetic properties of thin films, surfaces, and interfaces(for magnetic properties of nanostructures, see 75.75.-c)
• 73.40.Gk: Tunneling(for tunneling in quantum Hall effects, see 73.43.Jn)
• 72.15.Gd: Galvanomagnetic and other magnetotransport effects(see also 75.47.-m Magnetotransport phenomena; materials for magnetotransport)

• Journal: Acta Physica Polonica A
• Year: 2000
• Volume: 97
• Issue: 3
• Pages: 443-446

Dates

published

2000-03

Contributors

author

M. Wilczyński

• Institute of Physics, Warsaw Technical University Koszykowa 75, 00-662 Warszawa, Poland

author

J. Barnaś

• Department of Physics, Adam Mickiewicz University, Umultowska 85, 61-614 Poznań, Poland

Identifiers

DOI

10.12693/APhysPolA.97.443