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Article title

Tunneling Magnetoresistance in Planar Ferromagnetic Junctions

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EN
Abstracts
EN
Bias dependence of the tunnel magnetoresistance in simple planar ferromagnetic junctions is considered theoretically within the one-band model. The limit of sequential tunnelling in double junctions with a non-magnetic central electrode is studied as well. In this case tunnel magnetoresistance exists only when the spin relaxation time due to spin-flip scattering processes inside the central electrode is sufficiently long.
Keywords
EN
Contributors
  • Institute of Physics, Warsaw Technical University Koszykowa 75, 00-662 Warszawa, Poland
author
  • Department of Physics, Adam Mickiewicz University, Umultowska 85, 61-614 Poznań, Poland
References
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Publication order reference
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YADDA identifier
bwmeta1.element.bwnjournal-article-appv97z320kz
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