Title variants
Languages of publication
Abstracts
Bias dependence of the tunnel magnetoresistance in simple planar ferromagnetic junctions is considered theoretically within the one-band model. The limit of sequential tunnelling in double junctions with a non-magnetic central electrode is studied as well. In this case tunnel magnetoresistance exists only when the spin relaxation time due to spin-flip scattering processes inside the central electrode is sufficiently long.
Discipline
- 75.70.-i: Magnetic properties of thin films, surfaces, and interfaces(for magnetic properties of nanostructures, see 75.75.-c)
- 73.40.Gk: Tunneling(for tunneling in quantum Hall effects, see 73.43.Jn)
- 72.15.Gd: Galvanomagnetic and other magnetotransport effects(see also 75.47.-m Magnetotransport phenomena; materials for magnetotransport)
Journal
Year
Volume
Issue
Pages
443-446
Physical description
Dates
published
2000-03
Contributors
author
- Institute of Physics, Warsaw Technical University Koszykowa 75, 00-662 Warszawa, Poland
author
- Department of Physics, Adam Mickiewicz University, Umultowska 85, 61-614 Poznań, Poland
References
Document Type
Publication order reference
Identifiers
YADDA identifier
bwmeta1.element.bwnjournal-article-appv97z320kz