Low Temperature Transport and Magnetic Properties of SmB_{6}

• Authors: S. Gabani , K. Flachbart , V. Pavlík , E. Konovalova , Y. Paderno , T. Herrmannsdörfer
• Languages of publication: EN

Abstracts

EN

We present results of transport and magnetic properties of three single-crystalline samples of the intermediate valence small-gap semiconductor SmB_{6} at low temperatures. The received resistivity dependences of the samples below 0.5 K exhibit an activated behavior with an energy gap of a few mK. The temperature dependences of the magnetic susceptibility show an increase below 15 K which can be accounted for by impurities, by bare Sm^{3+} ions or by a small amount of in-gap magnetic 4f^{5}5d^{1} states.

Keywords

EN

75.20.Hr; 71.28.+d

Discipline

• 75.20.Hr: Local moment in compounds and alloys; Kondo effect, valence fluctuations, heavy fermions(for Kondo effect and scattering mechanisms in electronic conduction, see 72.15.Qm and 72.10.Fk)
• 71.28.+d: Narrow-band systems; intermediate-valence solids(for magnetic aspects, see 75.20.Hr and 75.30.Mb in magnetic properties and materials)

• Publisher: Institute of Physics, Polish Academy of Sciences
• Journal: Acta Physica Polonica A
• Year: 2000
• Volume: 97
• Issue: 3
• Pages: 419-422

Dates

published

2000-03

Contributors

author

S. Gabani

• Department of Experimental Physics, P.J. Šafárik University, Park Angelinum 9, 04154 Košice, Slovakia

author

K. Flachbart

• Institute of Experimental Physics, SAS, 04353 Košice, Slovakia

author

V. Pavlík

• Institute of Experimental Physics, SAS, 04353 Košice, Slovakia

author

E. Konovalova

• Institute for Problems of Materials Science, UAS, 252680 Kiev, Ukraine

author

Y. Paderno

• Institute for Problems of Materials Science, UAS, 252680 Kiev, Ukraine

author

T. Herrmannsdörfer

• Physikalisches Institut, Universität Bayreuth, 95440 Bayreuth, Germany

Identifiers

DOI

10.12693/APhysPolA.97.419