Anomalous Behavior of the Hall Effect in III-V Heterostructures

• Authors: Z. Dziuba , M. Górska , J. Marczewski , T. Przesławski , K. Regiński
• Languages of publication: EN

Abstracts

EN

The Hall effect and magnetoresistance were measured in the InAs/GaAs heterostructure at temperatures from 300 K down to 3 K, in a magnetic field range from 0.01 to 1.5 T. The anomalous magnetic field dependence of the Hall coefficient in the InAs/GaAs heterostructure in magnetic fields below 0.1 T was explained as due to an extraordinary Hall effect caused by skew scattering on dislocations.

Keywords

EN

61.72.Lk; 72.80.Ey

Discipline

• 72.80.Ey: III-V and II-VI semiconductors
• 61.72.Lk: Linear defects: dislocations, disclinations

• Journal: Acta Physica Polonica A
• Year: 2000
• Volume: 97
• Issue: 2
• Pages: 331-336

Dates

published

2000-02

received

1999-08-31

(unknown)

1999-12-02

Contributors

author

Z. Dziuba

• Institute of Physics, Polish Academy of Sciences, Al. Lotników 32/46, 02-668 Warsaw, Poland

author

M. Górska

• Institute of Physics, Polish Academy of Sciences, Al. Lotników 32/46, 02-668 Warsaw, Poland

author

J. Marczewski

• Institute of Electron Technology, Al. Lotników 32/46, 02-668 Warsaw, Poland

author

T. Przesławski

• Institute of Electron Technology, Al. Lotników 32/46, 02-668 Warsaw, Poland

author

K. Regiński

• Institute of Electron Technology, Al. Lotników 32/46, 02-668 Warsaw, Poland

Identifiers

DOI

10.12693/APhysPolA.97.331