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2000 | 97 | 2 | 331-336
Article title

Anomalous Behavior of the Hall Effect in III-V Heterostructures

Content
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Languages of publication
EN
Abstracts
EN
The Hall effect and magnetoresistance were measured in the InAs/GaAs heterostructure at temperatures from 300 K down to 3 K, in a magnetic field range from 0.01 to 1.5 T. The anomalous magnetic field dependence of the Hall coefficient in the InAs/GaAs heterostructure in magnetic fields below 0.1 T was explained as due to an extraordinary Hall effect caused by skew scattering on dislocations.
Keywords
EN
Publisher

Year
Volume
97
Issue
2
Pages
331-336
Physical description
Dates
published
2000-02
received
1999-08-31
(unknown)
1999-12-02
Contributors
author
  • Institute of Physics, Polish Academy of Sciences, Al. Lotników 32/46, 02-668 Warsaw, Poland
author
  • Institute of Physics, Polish Academy of Sciences, Al. Lotników 32/46, 02-668 Warsaw, Poland
author
  • Institute of Electron Technology, Al. Lotników 32/46, 02-668 Warsaw, Poland
  • Institute of Electron Technology, Al. Lotników 32/46, 02-668 Warsaw, Poland
author
  • Institute of Electron Technology, Al. Lotników 32/46, 02-668 Warsaw, Poland
References
Document Type
Publication order reference
Identifiers
YADDA identifier
bwmeta1.element.bwnjournal-article-appv97z207kz
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