Correlation-Driven Metal-Insulator Transitions

• Authors: J. Honig
• Languages of publication: EN

Abstracts

EN

The effect of correlation-driven electronic transitions are described for the V_{2}O_{3}, NiS_{2-x}Se_{x}, and Fe_{3}O_{4} systems. The various tranformations can all be rationalized in terms of elementary concepts pertaining to the Mott-Hubbard intraatomic electronic interactions or in terms of an order-disorder formalism involving Coulomb interactions among electrons on adjacent sites. Attention is directed to some outstanding issues that require further resolution.

Keywords

EN

71.30.+h; 71.45.Gm

Discipline

• 71.30.+h: Metal-insulator transitions and other electronic transitions
• 71.45.Gm: Exchange, correlation, dielectric and magnetic response functions, plasmons

• Publisher: Institute of Physics, Polish Academy of Sciences
• Journal: Acta Physica Polonica A
• Year: 2000
• Volume: 97
• Issue: 1
• Pages: 141-156

Dates

published

2000-01

Contributors

author

J. Honig

• Department of Chemistry, Purdue University, West Lafayette, 47907-1393, USA

Identifiers

DOI

10.12693/APhysPolA.97.141