Scattering Theory of the Johnson Spin Transistor

• Authors: L. Geux , A. Brataas , G. Bauer
• Languages of publication: EN

Abstracts

EN

We discuss a simple, semiclassical scattering theory for spin-dependent transport in a many-terminal formulation, with special attention to the four terminal device of Johnson referred to as spin transistor.

Keywords

EN

73.40.Gk; 73.23.Hk; 75.70.Pa

Discipline

• 73.23.Hk: Coulomb blockade; single-electron tunneling
• 73.40.Gk: Tunneling(for tunneling in quantum Hall effects, see 73.43.Jn)

• Publisher: Institute of Physics, Polish Academy of Sciences
• Journal: Acta Physica Polonica A
• Year: 2000
• Volume: 97
• Issue: 1
• Pages: 119-128

Dates

published

2000-01

Contributors

author

L. Geux

• Delft University of Technology, Laboratory of Applied Physics and DIMES, 2628 CJ Delft, The Netherlands

author

A. Brataas

• Delft University of Technology, Laboratory of Applied Physics and DIMES, 2628 CJ Delft, The Netherlands

author

G. Bauer

• Delft University of Technology, Laboratory of Applied Physics and DIMES, 2628 CJ Delft, The Netherlands

Identifiers

DOI

10.12693/APhysPolA.97.119