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Title variants
Languages of publication
Abstracts
A spin-valve transistor showing high sensitivity at low fields was developed. A large magnetocurrent, above 500% is realized by a magnetic field change of 2 to 4 Oe at 80 K. Hot electrons are injected into the spin-valve layer through a Si-Pt Schottky diode. These hot electrons, while traversing through the spin-valve, are spin-dependently scattered. Those electrons with right energy and momentum are collected by a collector (an Au-Si Schottky diode) constituting a collector current. The relative orientation of the magnetic layer in the spin-valve is changed by the application of a magnetic field and causes a change in collector current giving a large magnetocurrent.
Journal
Year
Volume
Issue
Pages
111-118
Physical description
Dates
published
2000-01
References
Document Type
Publication order reference
YADDA identifier
bwmeta1.element.bwnjournal-article-appv97z111kz
Identifiers
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