The Spin-Valve Transistor - a New Magnetoelectronic Device

• Authors: P. Anil Kumar , J. Lodder
• Languages of publication: EN

Abstracts

EN

A spin-valve transistor showing high sensitivity at low fields was developed. A large magnetocurrent, above 500% is realized by a magnetic field change of 2 to 4 Oe at 80 K. Hot electrons are injected into the spin-valve layer through a Si-Pt Schottky diode. These hot electrons, while traversing through the spin-valve, are spin-dependently scattered. Those electrons with right energy and momentum are collected by a collector (an Au-Si Schottky diode) constituting a collector current. The relative orientation of the magnetic layer in the spin-valve is changed by the application of a magnetic field and causes a change in collector current giving a large magnetocurrent.

Keywords

EN

75.70.-i; 75.70.Pa

Discipline

• 75.70.-i: Magnetic properties of thin films, surfaces, and interfaces(for magnetic properties of nanostructures, see 75.75.-c)

• Publisher: Institute of Physics, Polish Academy of Sciences
• Journal: Acta Physica Polonica A
• Year: 2000
• Volume: 97
• Issue: 1
• Pages: 111-118

Dates

published

2000-01

Contributors

author

P. Anil Kumar

• Information Storage Technology Group, MESA+ Research Institute, University of Twente, 7500 AE Enschede, The Netherlands

author

J. Lodder

• Information Storage Technology Group, MESA+ Research Institute, University of Twente, 7500 AE Enschede, The Netherlands

Identifiers

DOI

10.12693/APhysPolA.97.111