Defects and Defect Reactions in Semiconductor Nitrides

• Authors: C. Van de Walle , J. Neugebauer , C. Stampfl , M. McCluskey , N. Johnson
• Languages of publication: EN

Abstracts

EN

We report a comprehensive investigation of native point defects and impurities in GaN, AlN, and AlGaN alloys, with the goal of understanding doping limitations in nitride semiconductors. Unintentional incorporation of impurities (mainly oxygen) explains the tendency of nitride semiconductors to exhibit n-type conductivity. Silicon is the n-type dopant of choice; it remains shallow in AlGaN up to high Al content, while oxygen undergoes a DX transition. Experimental evidence for DX centers will be discussed. In p-type material, Mg doping is hindered by an increase in ionization energy with increasing Al content in AlGaN, and by nitrogen vacancies acting as compensating centers. Complex formation between magnesium and oxygen and between magnesium and nitrogen vacancies will be discussed.

Keywords

EN

61.72.Bb; 61.72.Ji; 61.82.Fk; 71.55.Eq

Discipline

• 61.72.Bb: Theories and models of crystal defects
• 71.55.Eq: III-V semiconductors
• 61.82.Fk: Semiconductors

• Publisher: Institute of Physics, Polish Academy of Sciences
• Journal: Acta Physica Polonica A
• Year: 1999
• Volume: 96
• Issue: 5
• Pages: 613-627

Dates

published

1999-11

Contributors

author

C. Van de Walle

• Xerox Palo Alto Research Center, 3333 Coyote Hill Road, Palo Alto, CA 94304, USA

author

J. Neugebauer

• Fritz-Haber-Institut der Max-Planck-Gesellschaft, Faradayweg 4-6, 14 195 Berlin-Dahlem, Germany

author

C. Stampfl

• Fritz-Haber-Institut der Max-Planck-Gesellschaft, Faradayweg 4-6, 14 195 Berlin-Dahlem, Germany

author

M. McCluskey

• Department of Physics, Washington State University, P.O. Box 642814, Pullman, WA 99164-2814, USA

author

N. Johnson

• Xerox Palo Alto Research Center, 3333 Coyote Hill Road, Palo Alto, CA 94304, USA

Identifiers

DOI

10.12693/APhysPolA.96.613