PL EN


Preferences help
enabled [disable] Abstract
Number of results
1999 | 96 | 5 | 573-592
Article title

Ultrafast Processes in Semiconductor Structures

Authors
Content
Title variants
Languages of publication
EN
Abstracts
EN
We review the dynamics of some of the more relevant optical processes in semiconductor quantum wells. We concentrate on the linear regime and study the time evolution of the light emission, using time-resolved photoluminescence spectroscopy. In intrinsic materials, excitonic effects determine their optical properties. Here we describe the formation and recombination of excitons, and the dependence of these processes on lattice temperature, exciton density, and energy of the excitation light pulses. We also describe the dynamics of the exciton's spin by optical orientation experiments. We discuss the principal mechanisms responsible for the spin flip of the excitons and clarify the role of the exciton localization. Finally, we will show that exciton-exciton interaction produces a breaking of the spin degeneracy in two-dimensional semiconductors. In doped quantum wells, we show that the two spin components of an optically created two-dimensional electron gas are well described by the Fermi-Dirac distributions with a common temperature but different chemical potentials. The rate of the spin depolarization of the electron gas is found to be independent of the mean electron kinetic energy but accelerated by thermal spreading of the carriers.
Keywords
Year
Volume
96
Issue
5
Pages
573-592
Physical description
Dates
published
1999-11
References
Document Type
Publication order reference
YADDA identifier
bwmeta1.element.bwnjournal-article-appv96z506kz
Identifiers
JavaScript is turned off in your web browser. Turn it on to take full advantage of this site, then refresh the page.