PL EN


Preferences help
enabled [disable] Abstract
Number of results
1999 | 96 | 5 | 535-544
Article title

Excitation of Deep Defects by Intense Terahertz Radiation

Authors
Content
Title variants
Languages of publication
EN
Abstracts
EN
An analysis is done of the ionization of deep impurity centers by high-intensity terahertz radiation, with photon energies tens of times lower than the impurity ionization energy. Under these conditions, ionization can be described as direct tunneling and phonon-assisted tunneling in which carrier emission is accompanied by defect tunneling in configuration space and electron tunneling in the electric field of the radiation. Within a broad range of intensity, frequency, and temperature, the terahertz electric field of the radiation acts like a static field. For very high frequencies and low temperatures an enhancement of tunneling as compared to static fields was observed. The transition between the quasi-static and the high frequency regime is determined by the tunneling time. For the case of deep impurities this is the time of redistribution of the defect vibrational system which depends strongly on temperature and the impurity structure.
Keywords
Year
Volume
96
Issue
5
Pages
535-544
Physical description
Dates
published
1999-11
References
Document Type
Publication order reference
YADDA identifier
bwmeta1.element.bwnjournal-article-appv96z503kz
Identifiers
JavaScript is turned off in your web browser. Turn it on to take full advantage of this site, then refresh the page.