Intervalley Transfer of Electrons in ZnS-Type Thin Film Electroluminescent Devices

• Authors: H. Zhao , Y. Wang , Z. Xu , X. Xu
• Languages of publication: EN

Abstracts

EN

Based on the calculation about intervalley scattering rates in ZnS, the intervalley transfer process in ZnS-type thin film electroluminescent devices is investigated through the Monte Carlo simulation. The transient time of intervalley transfer is about 0.2-0.3 ps, it coincides with that of electron average energy. Intervalley distribution shifts to high valleys as the electric field increased. The electron kinetic energy distributions in different valleys are also gained. We propose that high valleys could store energies, which could prolong the decay of the electron average energy as the field was removed. These results could be used as the basic data on the study of electroluminescent process and the citation of valley parameters in analytic models should be carefully considered.

Keywords

EN

72.20.-i; 78.60.-b

Discipline

• 78.60.-b: Other luminescence and radiative recombination
• 72.20.-i: Conductivity phenomena in semiconductors and insulators(see also 66.70.-f Nonelectronic thermal conduction and heat-pulse propagation in solids; thermal waves)

• Publisher: Institute of Physics, Polish Academy of Sciences
• Journal: Acta Physica Polonica A
• Year: 1999
• Volume: 96
• Issue: 3-4
• Pages: 475-482

Dates

published

1999-09

received

1999-02-16

(unknown)

1999-05-11

Contributors

author

H. Zhao

• Institute of Optoelectronic Technology, Northern Jiaotong University, Beijing 100044, P.R.China

author

Y. Wang

• Institute of Optoelectronic Technology, Northern Jiaotong University, Beijing 100044, P.R.China

author

Z. Xu

• Institute of Optoelectronic Technology, Northern Jiaotong University, Beijing 100044, P.R.China

author

X. Xu

• Institute of Optoelectronic Technology, Northern Jiaotong University, Beijing 100044, P.R.China

Identifiers

DOI

10.12693/APhysPolA.96.475