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1999 | 96 | 3-4 | 475-482
Article title

Intervalley Transfer of Electrons in ZnS-Type Thin Film Electroluminescent Devices

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Content
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Languages of publication
EN
Abstracts
EN
Based on the calculation about intervalley scattering rates in ZnS, the intervalley transfer process in ZnS-type thin film electroluminescent devices is investigated through the Monte Carlo simulation. The transient time of intervalley transfer is about 0.2-0.3 ps, it coincides with that of electron average energy. Intervalley distribution shifts to high valleys as the electric field increased. The electron kinetic energy distributions in different valleys are also gained. We propose that high valleys could store energies, which could prolong the decay of the electron average energy as the field was removed. These results could be used as the basic data on the study of electroluminescent process and the citation of valley parameters in analytic models should be carefully considered.
Keywords
EN
Year
Volume
96
Issue
3-4
Pages
475-482
Physical description
Dates
published
1999-09
received
1999-02-16
(unknown)
1999-05-11
References
Document Type
Publication order reference
YADDA identifier
bwmeta1.element.bwnjournal-article-appv96z317kz
Identifiers
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