Journal
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Abstracts
A series of highly perfect Al_{0.45}Ga_{0.55} As epitaxial layers implanted with 1 MeV Si ions to the doses in a range 7×10^{13}-2×10^{15} ions/cm^{2} were studied with various conventional and synchrotron X-ray diffraction methods. The presently used methods allowed both the measurement of lattice parameter changes and strain induced deformation. The evaluation of complete strain profiles was also performed by numerical simulation of diffraction curves. It was found that the implantation induced considerable change of lattice parameter reached the maximum at the dose 3×10^{14} ions/cm^{2}. The recorded curves proved also that the lattice parameter is almost constant in the near surface region of the implanted layers. The applied doses did not cause lattice amorphisation at room temperature.
Journal
Year
Volume
Issue
Pages
289-293
Physical description
Dates
published
1999-08
Contributors
author
- Institute of Atomic Energy, 05-400 Otwock-Świerk, Poland
author
- Institute of Electronic Materials Technology, Wólczyńska 133, 01-919 Warsaw, Poland
author
- HASYLAB at DESY, 22603 Hamburg, Germany
author
- Institute of Electronic Materials Technology, Wólczyńska 133, 01-919 Warsaw, Poland
author
- Forschungszentrum Rossendorf, 01314 Dresden, Germany
References
Document Type
Publication order reference
Identifiers
YADDA identifier
bwmeta1.element.bwnjournal-article-appv96z212kz