Lattice Deformation in Al_{x}Ga_{1-x}As Epitaxial Layers Caused by Implantation with High Doses of 1 Mev Si Ions

• Authors: K. Wieteska , W. Wierzchowski , W. Graeff , A. Turos , R. Grötzschel
• Languages of publication: EN

Abstracts

EN

A series of highly perfect Al_{0.45}Ga_{0.55} As epitaxial layers implanted with 1 MeV Si ions to the doses in a range 7×10^{13}-2×10^{15} ions/cm^{2} were studied with various conventional and synchrotron X-ray diffraction methods. The presently used methods allowed both the measurement of lattice parameter changes and strain induced deformation. The evaluation of complete strain profiles was also performed by numerical simulation of diffraction curves. It was found that the implantation induced considerable change of lattice parameter reached the maximum at the dose 3×10^{14} ions/cm^{2}. The recorded curves proved also that the lattice parameter is almost constant in the near surface region of the implanted layers. The applied doses did not cause lattice amorphisation at room temperature.

Keywords

EN

61.10.-i; 61.80.-x

Discipline

• 61.80.-x: Physical radiation effects, radiation damage(for photochemical reactions, see 82.50.-m; for effects of ionizing radiation on biological systems, see 87.53.-j)

• Journal: Acta Physica Polonica A
• Year: 1999
• Volume: 96
• Issue: 2
• Pages: 289-293

Dates

published

1999-08

Contributors

author

K. Wieteska

• Institute of Atomic Energy, 05-400 Otwock-Świerk, Poland

author

W. Wierzchowski

• Institute of Electronic Materials Technology, Wólczyńska 133, 01-919 Warsaw, Poland

author

W. Graeff

• HASYLAB at DESY, 22603 Hamburg, Germany

author

A. Turos

• Institute of Electronic Materials Technology, Wólczyńska 133, 01-919 Warsaw, Poland

author

R. Grötzschel

• Forschungszentrum Rossendorf, 01314 Dresden, Germany

Identifiers

DOI

10.12693/APhysPolA.96.289