PL EN


Preferences help
enabled [disable] Abstract
Number of results
1999 | 96 | 2 | 289-293
Article title

Lattice Deformation in Al_{x}Ga_{1-x}As Epitaxial Layers Caused by Implantation with High Doses of 1 Mev Si Ions

Content
Title variants
Languages of publication
EN
Abstracts
EN
A series of highly perfect Al_{0.45}Ga_{0.55} As epitaxial layers implanted with 1 MeV Si ions to the doses in a range 7×10^{13}-2×10^{15} ions/cm^{2} were studied with various conventional and synchrotron X-ray diffraction methods. The presently used methods allowed both the measurement of lattice parameter changes and strain induced deformation. The evaluation of complete strain profiles was also performed by numerical simulation of diffraction curves. It was found that the implantation induced considerable change of lattice parameter reached the maximum at the dose 3×10^{14} ions/cm^{2}. The recorded curves proved also that the lattice parameter is almost constant in the near surface region of the implanted layers. The applied doses did not cause lattice amorphisation at room temperature.
Keywords
EN
Contributors
author
  • Institute of Atomic Energy, 05-400 Otwock-Świerk, Poland
  • Institute of Electronic Materials Technology, Wólczyńska 133, 01-919 Warsaw, Poland
author
  • HASYLAB at DESY, 22603 Hamburg, Germany
author
  • Institute of Electronic Materials Technology, Wólczyńska 133, 01-919 Warsaw, Poland
  • Forschungszentrum Rossendorf, 01314 Dresden, Germany
References
Document Type
Publication order reference
Identifiers
YADDA identifier
bwmeta1.element.bwnjournal-article-appv96z212kz
JavaScript is turned off in your web browser. Turn it on to take full advantage of this site, then refresh the page.