Structure Changes in Cz-Si Single Crystals Irradiated with Fast Oxygen and Neon Ions

• Authors: L. Datsenko , D. Żymierska , J. Auleytner , D. Klinger , V. Machulin , V. Klad'ko , V. Melnik , I. Prokopenko , T. Czosnyka , J. Choiński
• Languages of publication: EN

Abstracts

EN

The research of the surface and the near-surface region of Cz-Si wafers irradiated with fast oxygen and neon ions of energy 4 MeV/u and dose 10^{14} particles/cm^{2} is presented. In our study several methods based on the Bragg case of X-ray diffraction using Ag K_{α_{1}}, as well as reflection high-energy electron diffraction and Nomarsky optical microscopy were used. It was shown that implantation with fast neon ions causes larger disturbances of silicon crystal structure than irradiation with oxygen ions.

Keywords

EN

61.80.Jh; 61.10.-i; 61.72.-y

Discipline

• 61.72.-y: Defects and impurities in crystals; microstructure(for radiation induced defects, see 61.80.-x; for defects in surfaces, interfaces, and thin films, see 68.35.Dv and 68.55.Ln; see also 85.40.Ry Impurity doping, diffusion, and ion implantation technology; for effects of crystal defects and doping on superconducting transition temperature, see 74.62.Dh)
• 61.80.Jh: Ion radiation effects(for ion implantation, see 61.72.U-)

• Publisher: Institute of Physics, Polish Academy of Sciences
• Journal: Acta Physica Polonica A
• Year: 1999
• Volume: 96
• Issue: 1
• Pages: 137-142

Dates

published

1999-07

Contributors

author

L. Datsenko

• Institute for Physics of Semiconductors, National Academy of Sciences of Ukraine, 45, Nauki av., 252 650 Kiev, Ukraine

author

D. Żymierska

• Institute of Physics, Polish Academy of Sciences, Al. Lotników 32/46, 02-668 Warsaw, Poland

author

J. Auleytner

• Institute of Physics, Polish Academy of Sciences, Al. Lotników 32/46, 02-668 Warsaw, Poland

author

D. Klinger

• Institute of Physics, Polish Academy of Sciences, Al. Lotników 32/46, 02-668 Warsaw, Poland

author

V. Machulin

• Institute for Physics of Semiconductors, National Academy of Sciences of Ukraine, 45, Nauki av., 252 650 Kiev, Ukraine

author

V. Klad'ko

• Institute for Physics of Semiconductors, National Academy of Sciences of Ukraine, 45, Nauki av., 252 650 Kiev, Ukraine

author

V. Melnik

• Institute for Physics of Semiconductors, National Academy of Sciences of Ukraine, 45, Nauki av., 252 650 Kiev, Ukraine

author

I. Prokopenko

• Institute for Physics of Semiconductors, National Academy of Sciences of Ukraine, 45, Nauki av., 252 650 Kiev, Ukraine

author

T. Czosnyka

• Heavy Ion Laboratory, Warsaw University, Pasteura 5a, 02-093 Warsaw, Poland

author

J. Choiński

• Heavy Ion Laboratory, Warsaw University, Pasteura 5a, 02-093 Warsaw, Poland

Identifiers

DOI

10.12693/APhysPolA.96.137