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1999 | 96 | 1 | 137-142
Article title

Structure Changes in Cz-Si Single Crystals Irradiated with Fast Oxygen and Neon Ions

Content
Title variants
Languages of publication
EN
Abstracts
EN
The research of the surface and the near-surface region of Cz-Si wafers irradiated with fast oxygen and neon ions of energy 4 MeV/u and dose 10^{14} particles/cm^{2} is presented. In our study several methods based on the Bragg case of X-ray diffraction using Ag K_{α_{1}}, as well as reflection high-energy electron diffraction and Nomarsky optical microscopy were used. It was shown that implantation with fast neon ions causes larger disturbances of silicon crystal structure than irradiation with oxygen ions.
Keywords
EN
Year
Volume
96
Issue
1
Pages
137-142
Physical description
Dates
published
1999-07
References
Document Type
Publication order reference
YADDA identifier
bwmeta1.element.bwnjournal-article-appv96z111kz
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