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1999 | 96 | 1 | 137-142
Article title

Structure Changes in Cz-Si Single Crystals Irradiated with Fast Oxygen and Neon Ions

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EN
Abstracts
EN
The research of the surface and the near-surface region of Cz-Si wafers irradiated with fast oxygen and neon ions of energy 4 MeV/u and dose 10^{14} particles/cm^{2} is presented. In our study several methods based on the Bragg case of X-ray diffraction using Ag K_{α_{1}}, as well as reflection high-energy electron diffraction and Nomarsky optical microscopy were used. It was shown that implantation with fast neon ions causes larger disturbances of silicon crystal structure than irradiation with oxygen ions.
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Contributors
author
  • Institute for Physics of Semiconductors, National Academy of Sciences of Ukraine, 45, Nauki av., 252 650 Kiev, Ukraine
author
  • Institute of Physics, Polish Academy of Sciences, Al. Lotników 32/46, 02-668 Warsaw, Poland
author
  • Institute of Physics, Polish Academy of Sciences, Al. Lotników 32/46, 02-668 Warsaw, Poland
author
  • Institute of Physics, Polish Academy of Sciences, Al. Lotników 32/46, 02-668 Warsaw, Poland
author
  • Institute for Physics of Semiconductors, National Academy of Sciences of Ukraine, 45, Nauki av., 252 650 Kiev, Ukraine
author
  • Institute for Physics of Semiconductors, National Academy of Sciences of Ukraine, 45, Nauki av., 252 650 Kiev, Ukraine
author
  • Institute for Physics of Semiconductors, National Academy of Sciences of Ukraine, 45, Nauki av., 252 650 Kiev, Ukraine
author
  • Institute for Physics of Semiconductors, National Academy of Sciences of Ukraine, 45, Nauki av., 252 650 Kiev, Ukraine
author
  • Heavy Ion Laboratory, Warsaw University, Pasteura 5a, 02-093 Warsaw, Poland
author
  • Heavy Ion Laboratory, Warsaw University, Pasteura 5a, 02-093 Warsaw, Poland
References
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bwmeta1.element.bwnjournal-article-appv96z111kz
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