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1999 | 96 | 1 | 131-135
Article title

Effect of Thermal Annealing on Optical Properties of Implanted Gaas

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Abstracts
EN
GaAs samples doped with indium atoms by ion implantation and thermal annealed were studied using a channelling method, Rutherford backscattering, and an ellipsometry. From these measurements it was observed that the layer implanted with 3×10^{16} cm^{-2} indium dose was totally damaged and its optical properties, namely a refraction index n and an extinction coefficient k, corresponded to the amorphous material. Subsequent isobaric heating of the implanted samples resulted in recovery of the crystalline structures with simultaneous change of the n and k index values.
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Contributors
author
  • Institute of Physics, Maria Curie-Skłodowska University, Pl. Marii Curie-Skłodowskiej 1, 20-031 Lublin, Poland
author
  • Institute of Physics, State University, Minsk, Republic of Byelorussia
author
  • Institute of Physics, Maria Curie-Skłodowska University, Pl. Marii Curie-Skłodowskiej 1, 20-031 Lublin, Poland
References
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bwmeta1.element.bwnjournal-article-appv96z110kz
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