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1999 | 96 | 1 | 131-135
Article title

Effect of Thermal Annealing on Optical Properties of Implanted Gaas

Content
Title variants
Languages of publication
EN
Abstracts
EN
GaAs samples doped with indium atoms by ion implantation and thermal annealed were studied using a channelling method, Rutherford backscattering, and an ellipsometry. From these measurements it was observed that the layer implanted with 3×10^{16} cm^{-2} indium dose was totally damaged and its optical properties, namely a refraction index n and an extinction coefficient k, corresponded to the amorphous material. Subsequent isobaric heating of the implanted samples resulted in recovery of the crystalline structures with simultaneous change of the n and k index values.
Keywords
EN
Year
Volume
96
Issue
1
Pages
131-135
Physical description
Dates
published
1999-07
References
Document Type
Publication order reference
YADDA identifier
bwmeta1.element.bwnjournal-article-appv96z110kz
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