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Abstracts
GaAs samples doped with indium atoms by ion implantation and thermal annealed were studied using a channelling method, Rutherford backscattering, and an ellipsometry. From these measurements it was observed that the layer implanted with 3×10^{16} cm^{-2} indium dose was totally damaged and its optical properties, namely a refraction index n and an extinction coefficient k, corresponded to the amorphous material. Subsequent isobaric heating of the implanted samples resulted in recovery of the crystalline structures with simultaneous change of the n and k index values.
Discipline
- 07.60.Fs: Polarimeters and ellipsometers
- 78.20.-e: Optical properties of bulk materials and thin films(for optical properties related to materials treatment, see 81.40.Tv; for optical materials, see 42.70-a; for optical properties of superconductors, see 74.25.Gz; for optical properties of rocks and minerals, see 91.60.Mk; for optical properties of specific thin films, see 78.66.-w)
Journal
Year
Volume
Issue
Pages
131-135
Physical description
Dates
published
1999-07
Contributors
author
- Institute of Physics, Maria Curie-Skłodowska University, Pl. Marii Curie-Skłodowskiej 1, 20-031 Lublin, Poland
author
- Institute of Physics, State University, Minsk, Republic of Byelorussia
author
- Institute of Physics, Maria Curie-Skłodowska University, Pl. Marii Curie-Skłodowskiej 1, 20-031 Lublin, Poland
References
Document Type
Publication order reference
Identifiers
YADDA identifier
bwmeta1.element.bwnjournal-article-appv96z110kz