Changes in Luminescence of Ce:yag Crystals Under Ionizing Radiation Treatment

• Authors: S. Kaczmarek , Z. Moroz , M. Kwasny , J. Kisielewski , T. Lukasiewicz , J. Wojtkowska , H. Rzewuski
• Languages of publication: EN

Abstracts

EN

Radiation induced changes in the luminescence spectrum under influence of UV light, γ-rays, electrons and protons for several concentrations of Ce^{3+} ions as well as Mg^{2+} ions in yttrium-aluminum garnet crystals were investigated. To irradiate with γ and electron as grown crystals were used while for proton irradiations the crystals were thermally annealed. For small concentrations of cerium ions (≈0.01 at.%) an increase in the luminescence (about 100%) was observed after gamma irradiation with a dose of 10^{5} Gy. This increase was due to the growth in Ce^{3+} ions concentration after γ-irradiation (≈50%), due to the Ce^{4+} → Ce^{3+} recharging reaction. For highly doped Ce:YAG crystals (0.1 at%, 0.2 at.%) also an increase, but much smaller (4%), for the Mg codoped crystals (0.1 at.%) was observed. After 1 MeV electron irradiation in the over-threshold type interaction a decrease in luminescence is observed due to the domination of the Ce^{3+} → Ce^{4+} ionization process. In the case of the proton irradiation, for small fluencies (≈10^{13} particles/cm^{2}) an increase in luminescence is observed due to the domination of the recharging processes of Ce^{4+} ions. For larger fluencies (>10^{14} particles/cm^{2}) a decrease takes place due to a high level of radiation defects.

Keywords

EN

61.72.Ji; 61.80.Ed

Discipline

• 61.80.Ed: γ-ray effects

• Publisher: Institute of Physics, Polish Academy of Sciences
• Journal: Acta Physica Polonica A
• Year: 1999
• Volume: 95
• Issue: 6
• Pages: 953-964

Dates

published

1999-06

received

1998-07-27

(unknown)

1999-02-19

Contributors

author

S. Kaczmarek

• Institute of Optoelectronics, M.U.T., Kaliski 2, 01-489 Warsaw, Poland

author

Z. Moroz

• Soltan Institute of Nuclear Studies, 05-400 Świerk, Poland

author

M. Kwasny

• Institute of Optoelectronics, M.U.T., Kaliski 2, 01-489 Warsaw, Poland

author

J. Kisielewski

• Institute of Electronic Materials Technology, Wolczyńska 133, 01-919 Warsaw, Poland

author

T. Lukasiewicz

• Institute of Electronic Materials Technology, Wolczyńska 133, 01-919 Warsaw, Poland
• Institute of Applied Physics, M.U.T., Kaliski 2, 01-489 Warsaw, Poland

author

J. Wojtkowska

• Soltan Institute of Nuclear Studies, 05-400 Świerk, Poland

author

H. Rzewuski

• Institute of Nuclear Chemistry and Technology, Dorodna 16, 03-195 Warsaw, Poland

Identifiers

DOI

10.12693/APhysPolA.95.953