Positron Annihilation Studies of Czochralski-Grown Silicon Annealed Under Pressure

• Authors: G. Karwasz , R. Brusa , A. Misiuk , A. Zecca
• Languages of publication: EN

Abstracts

EN

Two positron techniques have been applied to study dynamics of oxygen precipitation in Czochralski-grown silicon, annealed under high (up to 1.4 GPa) pressure. Lifetime measurements were performed with 180 ps resolution; Doppler broadening with a variable-energy slow-positron beam. Different thermal treatings rise the mean lifetime of positrons from 222 ps in as-grown samples up to 227 ps. In samples with a high (up to 85%) amount of oxygen precipitated, an intermediate (550-800 ps) lifetime is observed.

Keywords

EN

71.60.+z; 78.70.Bj; 71.55.Cn

Discipline

• 71.55.Cn: Elemental semiconductors
• 78.70.Bj: Positron annihilation(for positron states, see 71.60.+z in electronic structure of bulk materials; for positronium chemistry, see 82.30.Gg in physical chemistry and chemical physics)
• 71.60.+z: Positron states(for positron annihilation, see 78.70.Bj)

• Publisher: Institute of Physics, Polish Academy of Sciences
• Journal: Acta Physica Polonica A
• Year: 1999
• Volume: 95
• Issue: 4
• Pages: 575-580

Dates

published

1999-04

Contributors

author

G. Karwasz

• Instituto Nazionale per la Fisica della Materia, Universita' di Trento, 38050 Povo, Italy
• Instytut Fizyki, WSP Słupsk, Arciszewskiego 22b, 76-220 Słupsk, Poland

author

R. Brusa

• Instituto Nazionale per la Fisica della Materia, Universita' di Trento, 38050 Povo, Italy

author

A. Misiuk

• Instytut Technologii Elektronowej, Al. Lotników 32/46, 02-668 Warszawa, Poland

author

A. Zecca

• Instituto Nazionale per la Fisica della Materia, Universita' di Trento, 38050 Povo, Italy

Identifiers

DOI

10.12693/APhysPolA.95.575