PL EN


Preferences help
enabled [disable] Abstract
Number of results
1999 | 95 | 4 | 575-580
Article title

Positron Annihilation Studies of Czochralski-Grown Silicon Annealed Under Pressure

Content
Title variants
Languages of publication
EN
Abstracts
EN
Two positron techniques have been applied to study dynamics of oxygen precipitation in Czochralski-grown silicon, annealed under high (up to 1.4 GPa) pressure. Lifetime measurements were performed with 180 ps resolution; Doppler broadening with a variable-energy slow-positron beam. Different thermal treatings rise the mean lifetime of positrons from 222 ps in as-grown samples up to 227 ps. In samples with a high (up to 85%) amount of oxygen precipitated, an intermediate (550-800 ps) lifetime is observed.
Keywords
EN
Contributors
author
  • Instituto Nazionale per la Fisica della Materia, Universita' di Trento, 38050 Povo, Italy
  • Instytut Fizyki, WSP Słupsk, Arciszewskiego 22b, 76-220 Słupsk, Poland
author
  • Instituto Nazionale per la Fisica della Materia, Universita' di Trento, 38050 Povo, Italy
author
  • Instytut Technologii Elektronowej, Al. Lotników 32/46, 02-668 Warszawa, Poland
author
  • Instituto Nazionale per la Fisica della Materia, Universita' di Trento, 38050 Povo, Italy
References
Document Type
Publication order reference
Identifiers
YADDA identifier
bwmeta1.element.bwnjournal-article-appv95z423kz
JavaScript is turned off in your web browser. Turn it on to take full advantage of this site, then refresh the page.