Vacancy Cluster Distributions in He Implanted Silicon Studied by Slow Positron Annihilation Spectroscopy

• Authors: R. Brusa
• Languages of publication: EN

Abstracts

EN

Doppler broadening measurements performed by a slow positron beam on p-type Si samples implanted with He at 20 keV and at a fluence of 5×10^{15} and 2×10^{16} cm^{-2} are reviewed and discussed. The evolution of the open volume defects distribution was studied as a function of isochronal and isothermal annealing of the samples. In the as implanted samples the majority of the open volume defects produced by implantation was passivated by He. The open volume defects density decreases, reaching a minimum at 250°C. In the 250-650°C temperature range there is an increase in defects due to the appearance of vacancy clusters. At the higher annealing temperatures (700-900°C) the vacancy clusters disappear only in the samples implanted at 5×10^{15} cm^{-2}.

Keywords

EN

71.60.+z; 78.70.Bj; 71.55.Cn

Discipline

• 71.55.Cn: Elemental semiconductors
• 78.70.Bj: Positron annihilation(for positron states, see 71.60.+z in electronic structure of bulk materials; for positronium chemistry, see 82.30.Gg in physical chemistry and chemical physics)
• 71.60.+z: Positron states(for positron annihilation, see 78.70.Bj)

• Publisher: Institute of Physics, Polish Academy of Sciences
• Journal: Acta Physica Polonica A
• Year: 1999
• Volume: 95
• Issue: 4
• Pages: 474-478

Dates

published

1999-04

Contributors

author

R. Brusa

• Istituto Nazionale per la Fisica della Materia, Dipartimento di Fisica, Universita' di Trento 38050 Povo TN, Italy

Identifiers

DOI

10.12693/APhysPolA.95.474