PL EN


Preferences help
enabled [disable] Abstract
Number of results
1999 | 95 | 3 | 403-412
Article title

Excited State Absorption and Thermoluminescence in Ce and Mg Doped Yttrium Aluminum Garnet

Content
Title variants
Languages of publication
EN
Abstracts
EN
In this paper we report preliminary results of optical studies on Y_{3}Al_{5}O_{12} (YAG) crystals codoped with Ce and Mg. By using measurements of luminescence, absorption, and luminescence excitation spectra we demonstrate that although the basic features introduced to the YAG host by the Ce-doping remain intact, the Mg-codoping imposes some significant changes on other properties of the material. These changes are potentially important for laser and/or scintillator applications of YAG:Ce and are due, most likely, to modifications of defect populations in the material. We characterize them by using the techniques of thermoluminescence and excited state absorption under excimer laser pumping. These techniques, interestingly, yield results that seem inconsistent. While the thermoluminescence signal of the Mg-doped sample is strongly reduced, suggesting that trap concentrations in the presence of Mg are suppressed, the excited state absorption signal, which we also relate to the traps, is higher. We offer a tentative explanation of this contradiction between the two experiments that involves a massive transfer of electrons from the Mg-related defects to the excited state absorption centers caused by the excimer pump itself.
Keywords
Contributors
  • Institute of Physics, Nicholas Copernicus University, Grudziądzka 5/7, 87-100 Toruń, Poland
author
  • Institute of Physics, Nicholas Copernicus University, Grudziądzka 5/7, 87-100 Toruń, Poland
author
  • Institute of Physics, Nicholas Copernicus University, Grudziądzka 5/7, 87-100 Toruń, Poland
author
  • Institute of Physics, Nicholas Copernicus University, Grudziądzka 5/7, 87-100 Toruń, Poland
author
  • Institute of Experimental Physics, Gdańsk University, Wita Stwosza 57, 80-952 Gdańsk, Poland
author
  • Institute of Optoelectronics, Military University of Technology, 01-489 Warsaw, Poland
  • Institute of Electronic Materials Technology, 01-919 Warsaw, Poland
References
Document Type
Publication order reference
Identifiers
YADDA identifier
bwmeta1.element.bwnjournal-article-appv95z311kz
JavaScript is turned off in your web browser. Turn it on to take full advantage of this site, then refresh the page.