Resonant Tunnelling in Double-Barrier Heterostructures with an Accumulation Layer

• Authors: T. Wosiński , T. Figielski , A. Mąkosa , S. Wrotek , W. Dobrowolski
• Languages of publication: EN

Abstracts

EN

Two modes of electron gas injection in resonant tunnelling through GaAs/AlGaAs double-barrier heterostructures were revealed while studying their current-voltage characteristics. Examining peculiarities of the characteristics within the temperature range 4-350 K and under a high magnetic field, we were able to distinguish the contribution to resonant tunnelling of ballistic electrons injected from a three-dimensional electron gas in the emitter contact and that of electrons injected from a two-dimensional electron gas in the accumulation layer formed near the emitter barrier.

Keywords

EN

73.40.Gk; 73.50.Jt; 85.30.Mn

Discipline

• 85.30.Mn: Junction breakdown and tunneling devices (including resonance tunneling devices)
• 73.50.Jt: Galvanomagnetic and other magnetotransport effects (including thermomagnetic effects)
• 73.40.Gk: Tunneling(for tunneling in quantum Hall effects, see 73.43.Jn)

• Journal: Acta Physica Polonica A
• Year: 1998
• Volume: 94
• Issue: 3
• Pages: 617-621

Dates

published

1998-09

Contributors

author

T. Wosiński

• Institute of Physics, Polish Academy of Sciences and College of Science, Al. Lotników 32/46, 02-668 Warszawa, Poland

author

T. Figielski

• Institute of Physics, Polish Academy of Sciences and College of Science, Al. Lotników 32/46, 02-668 Warszawa, Poland

author

A. Mąkosa

• Institute of Physics, Polish Academy of Sciences and College of Science, Al. Lotników 32/46, 02-668 Warszawa, Poland

author

S. Wrotek

• Institute of Physics, Polish Academy of Sciences and College of Science, Al. Lotników 32/46, 02-668 Warszawa, Poland

author

W. Dobrowolski

• Institute of Physics, Polish Academy of Sciences and College of Science, Al. Lotników 32/46, 02-668 Warszawa, Poland

Identifiers

DOI

10.12693/APhysPolA.94.617