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1998 | 94 | 3 | 617-621
Article title

Resonant Tunnelling in Double-Barrier Heterostructures with an Accumulation Layer

Content
Title variants
Languages of publication
EN
Abstracts
EN
Two modes of electron gas injection in resonant tunnelling through GaAs/AlGaAs double-barrier heterostructures were revealed while studying their current-voltage characteristics. Examining peculiarities of the characteristics within the temperature range 4-350 K and under a high magnetic field, we were able to distinguish the contribution to resonant tunnelling of ballistic electrons injected from a three-dimensional electron gas in the emitter contact and that of electrons injected from a two-dimensional electron gas in the accumulation layer formed near the emitter barrier.
Keywords
EN
Year
Volume
94
Issue
3
Pages
617-621
Physical description
Dates
published
1998-09
References
Document Type
Publication order reference
YADDA identifier
bwmeta1.element.bwnjournal-article-appv94z352kz
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