Resonant Tunnelling in Double-Barrier Heterostructures with an Accumulation Layer

• Authors: T. Wosiński , T. Figielski , A. Mąkosa , S. Wrotek , W. Dobrowolski
• Languages of publication: EN

Abstracts

EN

Two modes of electron gas injection in resonant tunnelling through GaAs/AlGaAs double-barrier heterostructures were revealed while studying their current-voltage characteristics. Examining peculiarities of the characteristics within the temperature range 4-350 K and under a high magnetic field, we were able to distinguish the contribution to resonant tunnelling of ballistic electrons injected from a three-dimensional electron gas in the emitter contact and that of electrons injected from a two-dimensional electron gas in the accumulation layer formed near the emitter barrier.

Keywords

EN

73.40.Gk   73.50.Jt   85.30.Mn  

• Publisher: Institute of Physics, Polish Academy of Sciences
• Journal: Acta Physica Polonica A
• Year: 1998
• Volume: 94
• Issue: 3
• Pages: 617-621

Dates

published

1998-09

Identifiers

DOI

10.12693/APhysPolA.94.617