Role of the Thermal Stress on the Magnetophonon Peak Structure in the Parallel Transport of the GaAs/AlGaAs Multiple Quantum Wells
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The magnetophonon resonance in parallel transport of two types multiple quantum wells was studied. The transverse magnetoresistance was measured in pulsed magnetic fields up to 30 T (within temperature region from 77 to 340 K). A fine structure of magnetophonon resonance peaks which depends on temperature and does not depend on the type of multiple quantum wells, was observed. This effect could be attributed to two phenomena: contribution of barrier phonons and influence of thermostresses.
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