Structure, Surface Morphology and Optical Properties of Thin Films of ZnS and CdS Grown by Atomic Layer Epitaxy

• Authors: A. Szczerbakow , M. Godlewski , E. Dynowska , V. Ivanov , K. Świątek , E. Goldys , M. Phillips
• Languages of publication: EN

Abstracts

EN

In this communication we report successful growth of monocrystalline cubic ZnS and monocrystalline and polycrystalline cubic and wurtzite films of CdS by atomic layer epitaxy. Structural and optical properties of these films are analysed. ZnS (and CdS/ZnS) films grown on GaAs substrate are cubic. Atomic layer epitaxy grown films provide several advantages over ZnS and CdS materials grown by other techniques, especially compared to bulk material, which is grown at higher temperatures. First results for ZnS/CdS/ZnS quantum well structures are also discussed.

Keywords

EN

68.55.Jk; 68.60.-p; 81.15.Gh

Discipline

• 81.15.Gh: Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)(for chemistry of MOCVD, see 82.33.Ya in physical chemistry and chemical physics)
• 68.60.-p: Physical properties of thin films, nonelectronic

• Publisher: Institute of Physics, Polish Academy of Sciences
• Journal: Acta Physica Polonica A
• Year: 1998
• Volume: 94
• Issue: 3
• Pages: 579-582

Dates

published

1998-09

Contributors

author

A. Szczerbakow

• Institute of Physics, Polish Academy of Sciences, Al. Lotników 32/46, 02-668 Warsaw, Poland

author

M. Godlewski

• Institute of Physics, Polish Academy of Sciences, Al. Lotników 32/46, 02-668 Warsaw, Poland

author

E. Dynowska

• Institute of Physics, Polish Academy of Sciences, Al. Lotników 32/46, 02-668 Warsaw, Poland

author

V. Ivanov

• Institute of Physics, Polish Academy of Sciences, Al. Lotników 32/46, 02-668 Warsaw, Poland

author

K. Świątek

• Institute of Physics, Polish Academy of Sciences, Al. Lotników 32/46, 02-668 Warsaw, Poland

author

E. Goldys

• Semicond. Sci. & Technol. Lab., Macquarie Univ., North Ryde, 2109 NSW, Australia

author

M. Phillips

• Microstructural Analysis Unit, University of Technology, Sydney, Australia

Identifiers

DOI

10.12693/APhysPolA.94.579