Deep Levels in Cd_{0.99}Mn_{0.01}Te:Ga

• Authors: J. Szatkowski , E. Płaczek-Popko , K. Sierański , B. Bieg
• Languages of publication: EN

Abstracts

EN

Two types of samples were studied. In the material with higher donor concentration four electron traps labelled by us as E1 to E4 were found. For the traps E2 and E3 energies obtained from Arrhenius plots are equal to 0.24 eV and 0.36 eV, respectively. Electric field enhanced electron emission from the levels E1 and E4 was observed and described in terms of Frenkel-Poole mechanism. Capture process from the traps E2 was found to be thermally activated with energetic barriers equal to 0.20 eV for E2.

Keywords

EN

71.55.-i; 71.55.Gs

Discipline

• 71.55.Gs: II-VI semiconductors
• 71.55.-i: Impurity and defect levels

• Publisher: Institute of Physics, Polish Academy of Sciences
• Journal: Acta Physica Polonica A
• Year: 1998
• Volume: 94
• Issue: 3
• Pages: 575-578

Dates

published

1998-09

Contributors

author

J. Szatkowski

• Institute of Physics, Technical University of Wrocław, Wybrzeże Wyspiańskiego 27, 50-370 Wrocław, Poland

author

E. Płaczek-Popko

• Institute of Physics, Technical University of Wrocław, Wybrzeże Wyspiańskiego 27, 50-370 Wrocław, Poland

author

K. Sierański

• Institute of Physics, Technical University of Wrocław, Wybrzeże Wyspiańskiego 27, 50-370 Wrocław, Poland

author

B. Bieg

• Institute of Physics, Maritime Academy, Wały Chrobrego 1, 70-500 Szczecin, Poland

Identifiers

DOI

10.12693/APhysPolA.94.575