DLTS Study of Be-Doped p-Type AlGaAs/GaAs MBE Layers

• Authors: J. Szatkowski , E. Płaczek-Popko , K. Sierański , O. Hansen
• Languages of publication: EN

Abstracts

EN

Deep-level transient spectroscopy method was applied to study deep hole traps in p-type Al_{0.5}Ga_{0.5}As grown on GaAs semi-insulating substrate by MBE. Five hole traps labelled by us as H0 to H4 were found. For the traps H1, H3 and H4 thermal activation energies obtained from Arrhenius plots were equal to: E_{H1}=0.15 eV, E_{H3}=0.4 eV, and E_{H4}=0.46 eV. Hole emission from the trap H2 was electric field dependent with the thermal activation energy extrapolated to zero-field equal to 0.37 eV. Capture cross-sections for the traps H1 and H4 were thermally activated with energetic barriers 0.04 eV (for H1) and 0.18 eV (for H4).

Keywords

EN

71.55.-i; 71.55.Eq

Discipline

• 71.55.Eq: III-V semiconductors
• 71.55.-i: Impurity and defect levels

• Publisher: Institute of Physics, Polish Academy of Sciences
• Journal: Acta Physica Polonica A
• Year: 1998
• Volume: 94
• Issue: 3
• Pages: 565-569

Dates

published

1998-09

Contributors

author

J. Szatkowski

• Institute of Physics, Technical University of Wrocław, Wybrzeże Wyspiańskiego 27, 50-370 Wrocław, Poland

author

E. Płaczek-Popko

• Institute of Physics, Technical University of Wrocław, Wybrzeże Wyspiańskiego 27, 50-370 Wrocław, Poland

author

K. Sierański

• Institute of Physics, Technical University of Wrocław, Wybrzeże Wyspiańskiego 27, 50-370 Wrocław, Poland

author

O. Hansen

• Œrsted Laboratory, University of Copenhagen, Universitetparken 5, 2100 Copenhagen, Denmark

Identifiers

DOI

10.12693/APhysPolA.94.565