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1998 | 94 | 3 | 565-569
Article title

DLTS Study of Be-Doped p-Type AlGaAs/GaAs MBE Layers

Content
Title variants
Languages of publication
EN
Abstracts
EN
Deep-level transient spectroscopy method was applied to study deep hole traps in p-type Al_{0.5}Ga_{0.5}As grown on GaAs semi-insulating substrate by MBE. Five hole traps labelled by us as H0 to H4 were found. For the traps H1, H3 and H4 thermal activation energies obtained from Arrhenius plots were equal to: E_{H1}=0.15 eV, E_{H3}=0.4 eV, and E_{H4}=0.46 eV. Hole emission from the trap H2 was electric field dependent with the thermal activation energy extrapolated to zero-field equal to 0.37 eV. Capture cross-sections for the traps H1 and H4 were thermally activated with energetic barriers 0.04 eV (for H1) and 0.18 eV (for H4).
Keywords
EN
Year
Volume
94
Issue
3
Pages
565-569
Physical description
Dates
published
1998-09
References
Document Type
Publication order reference
YADDA identifier
bwmeta1.element.bwnjournal-article-appv94z342kz
Identifiers
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