Journal
Article title
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Abstracts
We report the first application of sublimation molecular beam epitaxy to grow uniformly and selectively doped Si:Er layers with Er concentration up to 5×10^{18} cm^{-3}. The Hall concentration of electrons is about 10% of total Er contents. The mobility is 300-400 cm^{2} V^{-1} s^{-1} at 300 K. All samples exhibit photoluminescence at 1.537 μm up to 100-140 K.
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Journal
Year
Volume
Issue
Pages
549-554
Physical description
Dates
published
1998-09
References
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Publication order reference
YADDA identifier
bwmeta1.element.bwnjournal-article-appv94z339kz
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