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Abstracts
We report the first application of sublimation molecular beam epitaxy to grow uniformly and selectively doped Si:Er layers with Er concentration up to 5×10^{18} cm^{-3}. The Hall concentration of electrons is about 10% of total Er contents. The mobility is 300-400 cm^{2} V^{-1} s^{-1} at 300 K. All samples exhibit photoluminescence at 1.537 μm up to 100-140 K.
Keywords
Journal
Year
Volume
Issue
Pages
549-554
Physical description
Dates
published
1998-09
Contributors
author
- Institute for Physics of Microstructures, Russian Academy of Sciences, GSP-105, Nizhny Novgorod, Russia
author
- Institute for Physics of Microstructures, Russian Academy of Sciences, GSP-105, Nizhny Novgorod, Russia
author
- Institute for Physics of Microstructures, Russian Academy of Sciences, GSP-105, Nizhny Novgorod, Russia
author
- Institute for Physics of Microstructures, Russian Academy of Sciences, GSP-105, Nizhny Novgorod, Russia
author
- Institute for Physics of Microstructures, Russian Academy of Sciences, GSP-105, Nizhny Novgorod, Russia
author
- Nizhny Novgorod State University, Gagarin Avn. 23, Nizhny Novgorod, Russia
author
- Nizhny Novgorod State University, Gagarin Avn. 23, Nizhny Novgorod, Russia
author
- Institut für Halbleiterphysik, Johannes Kepler Universität, 4040 Linz, Austria
author
- Institut für Halbleiterphysik, Johannes Kepler Universität, 4040 Linz, Austria
author
- Institut für Halbleiterphysik, Johannes Kepler Universität, 4040 Linz, Austria
author
- Institut für Halbleiterphysik, Johannes Kepler Universität, 4040 Linz, Austria
author
- Institute for Chemical Problems of Microelectronics, Moscow, Russia
author
- Institut für Analytische Chemie, Technische Universität Wien, Vienna, Austria
author
- Institut für Analytische Chemie, Technische Universität Wien, Vienna, Austria
References
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Publication order reference
Identifiers
YADDA identifier
bwmeta1.element.bwnjournal-article-appv94z339kz