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1998 | 94 | 3 | 549-554
Article title

Optically Active Si:Er Layers Grown by the Sublimation MBE Method

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Languages of publication
EN
Abstracts
EN
We report the first application of sublimation molecular beam epitaxy to grow uniformly and selectively doped Si:Er layers with Er concentration up to 5×10^{18} cm^{-3}. The Hall concentration of electrons is about 10% of total Er contents. The mobility is 300-400 cm^{2} V^{-1} s^{-1} at 300 K. All samples exhibit photoluminescence at 1.537 μm up to 100-140 K.
Keywords
EN
Year
Volume
94
Issue
3
Pages
549-554
Physical description
Dates
published
1998-09
References
Document Type
Publication order reference
YADDA identifier
bwmeta1.element.bwnjournal-article-appv94z339kz
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