Optically Active Si:Er Layers Grown by the Sublimation MBE Method

M. Stepikhova; A. Andreev; B. Andreev; Z. Krasil'nik; V. Shmagin; V. Kuznetsov; R. Rubtsova; W. Jantsch; H. Ellmer; L. Palmetshofer; H. Preier; Yu. Karpov; K. Piplits; H. Hutter

doi:10.12693/APhysPolA.94.549

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Acta Physica Polonica A

1998 | 94 | 3 | 549-554

Article title

Optically Active Si:Er Layers Grown by the Sublimation MBE Method

Authors

M. Stepikhova , A. Andreev , B. Andreev , Z. Krasil'nik , V. Shmagin , V. Kuznetsov , R. Rubtsova , W. Jantsch , H. Ellmer , L. Palmetshofer , H. Preier , Yu. Karpov , K. Piplits , H. Hutter

Content

http://przyrbwn.icm.edu.pl/APP/PDF/94/a094z3p39.pdf [remote]

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Abstracts

We report the first application of sublimation molecular beam epitaxy to grow uniformly and selectively doped Si:Er layers with Er concentration up to 5×10^{18} cm^{-3}. The Hall concentration of electrons is about 10% of total Er contents. The mobility is 300-400 cm^{2} V^{-1} s^{-1} at 300 K. All samples exhibit photoluminescence at 1.537 μm up to 100-140 K.

Keywords

81.15.Hi

Publisher

Institute of Physics, Polish Academy of Sciences

Journal

Acta Physica Polonica A

Year

1998

Volume

Issue

Pages

549-554

Physical description

Dates

published

1998-09

References

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Publication order reference

YADDA identifier

bwmeta1.element.bwnjournal-article-appv94z339kz

Identifiers

DOI

10.12693/APhysPolA.94.549