Optically Active Si:Er Layers Grown by the Sublimation MBE Method

• Authors: M. Stepikhova , A. Andreev , B. Andreev , Z. Krasil'nik , V. Shmagin , V. Kuznetsov , R. Rubtsova , W. Jantsch , H. Ellmer , L. Palmetshofer , H. Preier , Yu. Karpov , K. Piplits , H. Hutter
• Languages of publication: EN

Abstracts

EN

We report the first application of sublimation molecular beam epitaxy to grow uniformly and selectively doped Si:Er layers with Er concentration up to 5×10^{18} cm^{-3}. The Hall concentration of electrons is about 10% of total Er contents. The mobility is 300-400 cm^{2} V^{-1} s^{-1} at 300 K. All samples exhibit photoluminescence at 1.537 μm up to 100-140 K.

Keywords

EN

81.15.Hi

Discipline

• 81.15.Hi: Molecular, atomic, ion, and chemical beam epitaxy

• Publisher: Institute of Physics, Polish Academy of Sciences
• Journal: Acta Physica Polonica A
• Year: 1998
• Volume: 94
• Issue: 3
• Pages: 549-554

Dates

published

1998-09

Contributors

author

M. Stepikhova

• Institute for Physics of Microstructures, Russian Academy of Sciences, GSP-105, Nizhny Novgorod, Russia

author

A. Andreev

• Institute for Physics of Microstructures, Russian Academy of Sciences, GSP-105, Nizhny Novgorod, Russia

author

B. Andreev

• Institute for Physics of Microstructures, Russian Academy of Sciences, GSP-105, Nizhny Novgorod, Russia

author

Z. Krasil'nik

• Institute for Physics of Microstructures, Russian Academy of Sciences, GSP-105, Nizhny Novgorod, Russia

author

V. Shmagin

• Institute for Physics of Microstructures, Russian Academy of Sciences, GSP-105, Nizhny Novgorod, Russia

author

V. Kuznetsov

• Nizhny Novgorod State University, Gagarin Avn. 23, Nizhny Novgorod, Russia

author

R. Rubtsova

• Nizhny Novgorod State University, Gagarin Avn. 23, Nizhny Novgorod, Russia

author

W. Jantsch

• Institut für Halbleiterphysik, Johannes Kepler Universität, 4040 Linz, Austria

author

H. Ellmer

• Institut für Halbleiterphysik, Johannes Kepler Universität, 4040 Linz, Austria

author

L. Palmetshofer

• Institut für Halbleiterphysik, Johannes Kepler Universität, 4040 Linz, Austria

author

H. Preier

• Institut für Halbleiterphysik, Johannes Kepler Universität, 4040 Linz, Austria

author

Yu. Karpov

• Institute for Chemical Problems of Microelectronics, Moscow, Russia

author

K. Piplits

• Institut für Analytische Chemie, Technische Universität Wien, Vienna, Austria

author

H. Hutter

• Institut für Analytische Chemie, Technische Universität Wien, Vienna, Austria

Identifiers

DOI

10.12693/APhysPolA.94.549