Exciton Absorption in GaN

• Authors: M. Sobol , W. Bardyszewski
• Languages of publication: EN

Abstracts

EN

The absorption coefficient of the wurtzite-type GaN is described in terms of three almost totally decoupled excitons A, B, C associated with split valence bands of Γ_{9}, Γ_{7} and Γ_{7} symmetries using a spherically symmetric approximation for the standard effective-mass Hamiltonian. The excitonic equations are solved within the subspace of optically active states of s-symmetry. The effects of crystal field and spin-orbit coupling are discussed. The results show that the spherical approximation is in perfect agreement with experimental findings.

Keywords

EN

71.35.-y; 78.20.Bh; 78.66.Fd

Discipline

• 78.66.Fd: III-V semiconductors
• 78.20.Bh: Theory, models, and numerical simulation
• 71.35.-y: Excitons and related phenomena

• Publisher: Institute of Physics, Polish Academy of Sciences
• Journal: Acta Physica Polonica A
• Year: 1998
• Volume: 94
• Issue: 3
• Pages: 534-538

Dates

published

1998-09

Contributors

author

M. Sobol

• Institute of Theoretical Physics, Warsaw University, Hoża 69, 00-681 Warsaw, Poland

author

W. Bardyszewski

• Institute of Theoretical Physics, Warsaw University, Hoża 69, 00-681 Warsaw, Poland

Identifiers

DOI

10.12693/APhysPolA.94.534